Capacitance type humidity sensor with passivation layer

• US 20030179805A1
• Filed: 02/27/2003
• Published: 09/25/2003
• Est. Priority Date: 03/20/2002
• Status: Abandoned Application

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Toyoda, Inao, Hamamoto, Kazuaki
• Application Number:
  US10/374,102
• Publication Number:
  US 20030179805A1
• Time in Patent Office: Days
• US Class Current: 374/16
• CPC Class Codes: G01N 27/225 by using hygroscopic materials

Abstract

A capacitance type humidity sensor is composed of a substrate, two electrodes, a passivation layer, and a humidity-sensitive layer. The two electrodes are disposed on the substrate and on the same plane, and face each other with spacing therebetween. The passivation layer covers the two electrodes. The humidity-sensitive layer is disposed on the spacing or between the spacing, and the dielectric constant of the humidity-sensitive layer is changed corresponding to humidity. As the spacing is broadened, the hysteresis in the humidity sensor is reduced. Especially, when the spacing is twice or more larger than the film thickness of the passivation layer, the hysteresis is reduced to be less than 10 % RH in relative humidity.

Claims

1. A capacitance type humidity sensor, comprising:

a substrate;

two electrodes disposed on the substrate and on the same plane so as to face each other with spacing therebetween;

a passivation layer disposed on the two electrodes so as to cover the two electrodes; and

a humidity-sensitive layer that directly contacts the passivation layer so as to cover the two electrodes, the humidity-sensitive layer having a dielectric constant which changes according to ambient humidity,

wherein the spacing is twice or more larger than the film thickness of the passivation layer.

2. A capacitance type humidity sensor according to claim 1, wherein the spacing is three times or more larger than the film thickness of the passivation layer.

3. A capacitance type humidity sensor according to claim 1, wherein the passivation layer is made of silicon nitride.

4. A capacitance type humidity sensor according to claim 1, further comprising an insulating film disposed between the substrate and the two electrodes.

5. A capacitance type humidity sensor according to claim 1,

wherein each of the two electrodes is composed of a base electrode and a plurality of comb-tooth electrodes, which extend from the base electrode,

wherein the plurality of comb-tooth electrodes of the two electrodes alternately face each other, and

wherein the spacing is defined as spacing between the pair of comb-tooth electrodes of the two electrodes.

6. A capacitance type humidity sensor according to claim 1, wherein the humidity-sensitive layer is made of high polymer organic material that is absorbent of moisture.

7. A capacitance type humidity sensor according to claim 1, wherein the two electrodes are made of metallic material.

8. A capacitance type humidity sensor according to claim 1, wherein the substrate is made of semiconductor material.

9. A capacitance type humidity sensor according to claim 1, wherein the spacing is less than 10 microns, and the film thickness of the passivation layer is less than 3.2 microns.