Silicon device
First Claim
1. A silicon device comprising:
- an insulating substrate having a recess formed on the surface thereof, a beam-like structure made of silicon formed on the front surface of the insulating substrate to surround the recess, said beam-like structure comprising at least one functional section having a supporting section bonded onto the insulating substrate and at least one cantilever formed integrally with the supporting section while extending across the recess;
a frame made of silicon that surrounds the beam-like structure with a space kept therefrom and is formed onto the insulating substrate; and
a conductive film having electrical continuity with the frame and formed on the surface of the insulating substrate at least in a portion right below the cantilever.
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Accused Products
Abstract
A silicon device including an insulating substrate having a recess formed on the surface thereof, and a beam-like structure made of silicon formed on the front surface of the insulating substrate to surround the recess. The beam-like structure includes at least one functional section having a supporting section bonded onto the insulating substrate and at least one cantilever formed integrally with the supporting section while extending across the recess. The silicon device also includes a frame made of silicon that surrounds the beam-like structure with a space kept therefrom and is formed onto the insulating substrate. The silicon device also includes a conductive film having electrical continuity with the frame and formed on the surface of the insulating substrate at least in a portion right below the cantilever. The conductive film prevents the insulating substrate from being charged thereby significantly suppressing the damage caused on the beam-like structure during dry etching.
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Citations
7 Claims
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1. A silicon device comprising:
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an insulating substrate having a recess formed on the surface thereof, a beam-like structure made of silicon formed on the front surface of the insulating substrate to surround the recess, said beam-like structure comprising at least one functional section having a supporting section bonded onto the insulating substrate and at least one cantilever formed integrally with the supporting section while extending across the recess;
a frame made of silicon that surrounds the beam-like structure with a space kept therefrom and is formed onto the insulating substrate; and
a conductive film having electrical continuity with the frame and formed on the surface of the insulating substrate at least in a portion right below the cantilever. - View Dependent Claims (2, 3, 4, 5)
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6. A silicon device comprising:
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an insulating substrate having a recess formed on the surface thereof, a beam-like structure made of silicon formed on the front surface of the insulating substrate to surround the recess, said beam-like structure comprising at least one functional section having a supporting section bonded onto the insulating substrate and at least one cantilever formed integrally with the supporting section while extending across the recess, said beam-like silicon structure comprising two or more functional structures that are electrically insulated from each other and have different volumes;
a frame made of silicon that surrounds the beam-like structure with a space kept therefrom and is formed onto the insulating substrate; and
a conductive film having electrical continuity with the supporting section of the functional section of the largest volume and formed on the surface of the insulating substrate at least in a portion right below the cantilever. - View Dependent Claims (7)
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Specification