Method to improve STI nano gap fill and moat nitride pull back
First Claim
1. A method to provide a more uniform STI oxide liner and also make the moat nitride pullback possible comprising the steps of:
- depositing and etching a nitride liner to form a thin side wall nitride formation in shallow trench isolation before STI liner oxidation.
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Abstract
A method of improving shallow trench isolation (STI) gap fill and moat nitride pull back is provided by after the steps of growing a pad oxide, depositing a nitride layer on the pad oxide and the steps of moat patterning, moat etching and moat clean, the steps of growing thermal oxide, deglazing a part of a part of the moat nitride; depositing a thin nitride liner, etching the nitride to form a thin side wall nitride in the STI trench; and performing an oxide Hydroflouric (HF) acid deglazing before STI liner oxidating and depositing oxide to fill the trench.
13 Citations
11 Claims
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1. A method to provide a more uniform STI oxide liner and also make the moat nitride pullback possible comprising the steps of:
depositing and etching a nitride liner to form a thin side wall nitride formation in shallow trench isolation before STI liner oxidation.
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2. A method to provide a more uniform STI oxide liner comprising the steps of:
depositing and etching a nitride liner to form a thin side wall nitride formation in shallow trench isolation before STI liner oxidation.
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3. A method to provide the moat nitride pullback possible comprising the steps of:
depositing and etching a nitride liner to form a thin side wall nitride formation in shallow trench isolation before STI gap fill.
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4. A method of STI formation on a silicon wafer comprising the steps of:
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growing pad oxide on the face of the silicon wafer;
deposit nitride layer on said pad oxide;
moat patterning, moat etching and moat etch cleaning;
growing thermal oxide;
etching a part of the moat nitride using hot phosphoric acid;
depositing a very thin nitride liner;
etching the nitride to form a thin side wall nitride in the STI trench;
performing Hydroflouric (HF) acid deglaze process; and
performing STI liner oxidation. - View Dependent Claims (5, 6, 7, 8)
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9. A method of STI formation on a silicon wafer comprising the steps of:
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growing pad oxide on the face of the silicon wafer;
deposit nitride layer on said pad oxide;
moat patterning, moat etching and moat etch cleaning;
growing thermal oxide;
etching a part of the moat nitride;
depositing a very thin nitride liner;
etching the nitride to form a thin side wall nitride in the STI trench;
deglazing for under cut and moat pad oxide deglaze; and
performing STI liner oxidation. - View Dependent Claims (10, 11)
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Specification