Selective deposition of abarrier layer on a metal film
First Claim
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1. A method of selectively forming a barrier layer on a metal feature, comprising:
- providing a substrate having exposed metal features surrounded by a dielectric material to a process environment;
forming a barrier layer on the exposed metal features using a cyclical deposition process wherein the cyclical deposition process includes a predetermined number of deposition cycles followed by a purge step, and wherein each deposition cycle comprises alternately providing a refractory metal-containing precursor and a reducing gas to the process environment; and
repeating the cyclical deposition process until a desired thickness for the barrier layer is formed.
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Abstract
A method to selectively deposit a barrier layer on a metal film formed on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the metal film formed on the substrate in a process chamber.
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Citations
43 Claims
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1. A method of selectively forming a barrier layer on a metal feature, comprising:
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providing a substrate having exposed metal features surrounded by a dielectric material to a process environment;
forming a barrier layer on the exposed metal features using a cyclical deposition process wherein the cyclical deposition process includes a predetermined number of deposition cycles followed by a purge step, and wherein each deposition cycle comprises alternately providing a refractory metal-containing precursor and a reducing gas to the process environment; and
repeating the cyclical deposition process until a desired thickness for the barrier layer is formed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method of selectively forming a tungsten barrier layer on a metal feature, comprising:
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providing a substrate having exposed metal features surrounded by a dielectric material to a process environment;
forming a tungsten barrier layer on the exposed metal features using a cyclical deposition process wherein the cyclical deposition process includes a predetermined number of deposition cycles followed by a purge step, and wherein each deposition cycle comprises alternately providing a tungsten-containing precursor and a reducing gas to the process environment; and
repeating the cyclical deposition process until a desired thickness for the tungsten barrier layer is formed. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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Specification