Organic field effect transistor, method for structuring an ofet and integrated circuit

• US 20030183817A1
• Filed: 02/27/2003
• Published: 10/02/2003
• Est. Priority Date: 09/01/2000
• Status: Active Grant

• Current Assignee: PolyIC GmbH & Co. KG (Leonhard KURZ Stiftung & Company KG)
• Original Assignee: PolyIC GmbH & Co. KG (Leonhard KURZ Stiftung & Company KG)
• Inventors: Rost, Henning, Bernds, Adolf, Clemens, Wolfgang, Fix, Walter
• Granted Patent: US 6,960,489 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 10/46 Field-effect transistors, e.g. organic thin-film transistors [OTFT] H10K10/43 takes precedence
• CPC Class Codes: H10K 71/13 using printing techniques, e.g. ink-jet printing or screen printing

Abstract

The invention relates to an organic field effect transistor, a method for structuring an OFET and an integrated circuit with improved structuring of the functional polymer layers. Structuring is achieved by scraping the functional polymer into a mold layer in which recesses are initially produced by exposure.

Claims

1. An organic field effect transistor (OFET), comprising at least the following layers on a substrate:

an organic semiconductor layer between and above at least one source electrode and at least one drain electrode which comprise a conductive functional polymer,

an organic insulation layer above the semiconducting layer and

an organic conductor layer,

the conductor layer and at least one of the other two layers being structured.

2. The OFET as claimed in claim 1, having a distance 1 between source and drain electrode of less than 20 μ

m, in particular of less than 10 μ

m and very particularly of 2 to 5 μ

m.

3. The OFET as claimed in either of claims 1 and 2, which comprises an electrode having a layer thickness of 1 μ

m.

4. An integrated circuit which comprises at least one OFET which has at least one structured conductor layer and a further structured layer.

5. A method for structuring an OFET by scraping at least one functional polymer into a negative mold.

6. The method as claimed in claim 5, comprising the following operations:

a) a mold layer for a negative mold is applied to a substrate or a lower layer,

b) this mold layer acquires recesses which correspond to the negatives of the subsequent structures and

c) the functional polymer is then scraped into these recesses.

7. The method as claimed in either of claims 5 and 6, in which the mold layer is removed after the structuring.

8. The method as claimed in any of claims 5 to 7, in which the functional polymer is scraped at least twice into the recesses of the mold layer.

9. The method as claimed in any of claims 5 to 8, in which the recesses in the mold layer are produced by irradiation using a mask.

10. The method as claimed in any of claims 5 to 9, which is carried out as a continuous method using a continuously moving belt.