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Method and circuit for compensating MOSFET capacitance variations in integrated circuits

  • US 20030184315A1
  • Filed: 04/10/2002
  • Published: 10/02/2003
  • Est. Priority Date: 04/02/2002
  • Status: Active Grant
First Claim
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1. A method for tracking the MOS oxide thickness by the native threshold voltage Vth of a “

  • native”

    MOS transistor for the purpose of compensating MOS capacitance variations comprising;

    provide a MOS transistor having a native threshold voltage Vth;

    sense the native threshold voltage Vth of a native MOS transistor;

    build a suitable reference voltage level by adding by a circuit means another constant voltage Vx;

    charge a MOS capacitor built out of a native MOS transistor up to the reference level Vref=Vx+Vth; and

    measure a capacitance related value in a suitable configuration for oscillators which depends now no more on the oxide thickness.

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