Memory structures
First Claim
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1. A memory structure comprising:
- a first electrode;
a second electrode;
a third electrode;
a memory storage element of a predetermined device type disposed between said third electrode and said second electrode, said memory storage element having a memory storage element cross-sectional area and configured for predictable breakdown as a memory storage element;
a control element of said predetermined device type disposed between said second electrode and said first electrode, said control element having a control cross-sectional area and configured as a control element for said memory storage element; and
said control element cross-sectional area being larger than said memory storage element cross-sectional area.
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Abstract
A memory structure that includes a first electrode, a second electrode, a third electrode, a control element of a predetermined device type disposed between the first electrode and the second electrode, and a memory storage element of the predetermined device type disposed between the second electrode and the third electrode. The memory storage element has a has a cross-sectional area that is greater than a cross-sectional area of the control element.
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Citations
49 Claims
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1. A memory structure comprising:
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a first electrode;
a second electrode;
a third electrode;
a memory storage element of a predetermined device type disposed between said third electrode and said second electrode, said memory storage element having a memory storage element cross-sectional area and configured for predictable breakdown as a memory storage element;
a control element of said predetermined device type disposed between said second electrode and said first electrode, said control element having a control cross-sectional area and configured as a control element for said memory storage element; and
said control element cross-sectional area being larger than said memory storage element cross-sectional area. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A memory structure comprising:
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a conductive structure having a vertical extent;
a first memory storage element of a predetermined device type and a first control element of said predetermined device type laterally adjacent said conductive structure;
said first control element having a cross-sectional area that is larger than a cross-sectional area of said first memory storage element;
a second memory storage element of said predetermined device type and a second control element of said predetermined device type laterally adjacent said conductive structure; and
said second control element having a cross-sectional area that is larger than a cross-sectional area of said second memory storage element. - View Dependent Claims (30)
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31. A memory structure comprising:
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means of a predetermined device type for storing a memory state;
means of said predetermined device type for controlling said means for storing;
said means for storing having a smaller cross-sectional area than said means for controlling.
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32. A memory structure comprising:
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a first conductive tub having a base and a rim that are vertically separated;
a first memory selection conductor vertically adjacent said base of said first conductive tub;
a first control element of disposed between said first memory selection conductor and said base of said first conductive tub;
a second memory selection conductor vertically adjacent a portion of said rim of said first conductive tub;
a first memory storage element disposed between said rim of said first conductive tub and said second memory selection conductor;
said first control element having a cross-sectional area that is larger than a cross-sectional area of said first memory storage element;
a second conductive tub having a base and a rim that are vertically separated, said base being vertically adjacent said second memory selection conductor;
a second control element disposed between said second memory selection conductor and said base of said second conductive tub;
a third memory selection conductor vertically adjacent a portion of said rim of said second conductive tub;
a second memory storage element disposed between a portion of said rim of said second conductive tub and said third memory selection conductor;
said second control element having a cross-sectional area that is larger than a cross-sectional area of said second memory storage element. - View Dependent Claims (33)
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34. A memory structure comprising:
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a plurality of layers of memory cells;
each memory cell comprising a first electrode, a second electrode, a third electrode, a memory storage element disposed between said second electrode and said third electrode, and a control element disposed between said first electrode and said second electrode; and
said control element having a cross-sectional area that is greater than a cross-sectional area of said memory storage element. - View Dependent Claims (35, 36, 37)
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38. A memory structure comprising:
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a plurality of layers of memory cells;
each memory cell comprising means for storing a memory state and means for controlling said means for storing; and
said means for storing having a smaller cross-sectional area than said means for controlling.
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39. A method of making a memory structure comprising:
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creating a first electrode;
forming on the first electrode a control element of a predetermined device type on the first electrode;
creating a second electrode; and
forming a memory storage element of the predetermined device type and having a cross-sectional area that is smaller than a cross-sectional area of the control element. - View Dependent Claims (40, 41, 42, 43, 44, 45, 46)
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47. A method of making a memory structure comprising:
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forming in a first memory layer a plurality of memory cells each including a memory storage element and a control storage element having a cross-sectional area that is larger than a cross-sectional area of the memory storage element; and
forming in a second memory layer a plurality of memory cells each including a memory storage element and a control storage element having a cross-sectional area that is larger than a cross-sectional area of the memory storage element. - View Dependent Claims (48, 49)
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Specification