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Method of forming metal interconnection layer in semiconductor device

  • US 20030186524A1
  • Filed: 12/23/2002
  • Published: 10/02/2003
  • Est. Priority Date: 04/01/2002
  • Status: Active Grant
First Claim
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1. A method of forming a metal interconnection layer in a semiconductor device, comprising the steps of:

  • forming a lower conductive layer on a semiconductor substrate;

    forming an interlayer insulating film on the semiconductor substrate on which the lower conductive layer is formed;

    selectively etching the interlayer insulating film to form an opening of a given shape through which the lower conductive layer is exposed;

    forming a metal seed layer along the step on the result in which the opening of the given shape is formed;

    reflowing the metal seed layer by means of a laser process to form the metal seed layer of an uniform thickness;

    performing a hydrogen reduction annealing process for the metal seed layer; and

    forming a metal film on the metal seed layer by means of an electroplating method.

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