Method for forming fine patterns in semiconductor device
First Claim
1. A method for forming fine patterns in a semiconductor device, comprising the steps of:
- coating a photoresist layer for an I-line and a positive type ArF photoresist layer on a semiconductor substrate that includes a conductive layer;
performing exposure and a first baking process on the resultant substrate by using an etch-mask of a desired pattern to produce alcohol radicala (OH−
) or carboxyl acid (COOH) in the positive type ArF photoresist layer, in which a silylation reaction can be produced;
removing the etch-mask;
performing a development process to the resultant structure to form a first photoresist pattern;
performing exposure and a second baking process on the substrate that includes the first photoresist pattern;
performing a silylation process to the substrate, to which the second baking process has been performed, by using an HMDS to form a silicon oxide layer on the surface of the first photoresist pattern through reaction between the alcohol radicals (OH−
) or the carboxyl acid (COOH) and the HMDS;
performing a dry development process to the photoresist layer for the I-line by using the first photoresist pattern together with the silicon oxide layer as an etch-mask in order to form a second photoresist pattern; and
etching the conductive layer by using the first and second photoresist patterns along with the silicon oxide layer as an etch-mask in order to form bit-lines.
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Accused Products
Abstract
Disclosed is a method of forming a fine pattern in a semiconductor device using a photolithography process, which comprises: coating a photoresist layer for an I-line and a positive type ArF photoresist layer on a semiconductor substrate that includes a conductive layer; performing exposure and a first baking process on the resultant substrate by using an etch-mask of a desired pattern to produce alcohol radicals (OH−) or carboxyl acid (COOH) in the positive type ArF photoresist layer, in which a silylation reaction can be produced; removing the etch-mask; performing a development process to the resultant structure to form a first photoresist pattern; performing exposure and a second baking process on the substrate that includes the first photoresist pattern; performing a silylation process to the substrate to which the second baking process has been performed, by using an HMDS to form a silicon oxide layer on the surface of the first photoresist pattern through reaction between the alcohol radicals (OH−) or the carboxyl acid (COOH) and the HMDS; performing a dry development process to the photoresist layer for the I-line by using the first photoresist pattern along with the silicon oxide layer as an etch-mask in order to form a second photoresist pattern; and etching the conductive layer by using the first and second photoresist patterns together with the silicon oxide layer as an etch-mask in order to form bit-lines.
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Citations
13 Claims
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1. A method for forming fine patterns in a semiconductor device, comprising the steps of:
-
coating a photoresist layer for an I-line and a positive type ArF photoresist layer on a semiconductor substrate that includes a conductive layer;
performing exposure and a first baking process on the resultant substrate by using an etch-mask of a desired pattern to produce alcohol radicala (OH−
) or carboxyl acid (COOH) in the positive type ArF photoresist layer, in which a silylation reaction can be produced;
removing the etch-mask;
performing a development process to the resultant structure to form a first photoresist pattern;
performing exposure and a second baking process on the substrate that includes the first photoresist pattern;
performing a silylation process to the substrate, to which the second baking process has been performed, by using an HMDS to form a silicon oxide layer on the surface of the first photoresist pattern through reaction between the alcohol radicals (OH−
) or the carboxyl acid (COOH) and the HMDS;
performing a dry development process to the photoresist layer for the I-line by using the first photoresist pattern together with the silicon oxide layer as an etch-mask in order to form a second photoresist pattern; and
etching the conductive layer by using the first and second photoresist patterns along with the silicon oxide layer as an etch-mask in order to form bit-lines. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification