Semiconductor display device

• US 20030189210A1
• Filed: 03/28/2003
• Published: 10/09/2003
• Est. Priority Date: 04/09/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Osame, Mitsuaki, Murakami, Satoshi, Hayakawa, Masahiko, Kato, Kiyoshi, Yamazaki, Shunpei
• Granted Patent: US 7,671,369 B2
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: G02F 1/133357 Planarisation layers
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1244 for preventing breakage, peeling or short circuiting
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 33/52 Encapsulations
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/873 Encapsulations

Abstract

It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

Claims

1. A semiconductor display device comprising:

a pixel portion; and

a semiconductor circuit generating a signal for displaying an image on the pixel portion, the semiconductor circuit having a capacitor,

wherein the pixel portion and the semiconductor circuit comprise a thin film transistor, and the thin film transistor has an active layer, a gate electrode adjacent to the active layer with a gate insulating film interposed therebetween;

a first inorganic insulating film covering the thin film transistor,

an organic resin film formed in contact with the first inorganic insulating film, the organic resin film having a first opening part and a second opening part;

a second inorganic insulating film covering the organic resin film;

wherein the first and second inorganic insulating films are in contact with each other in the first opening part and the second opening part,

wherein a contact hole is formed in the gate insulating film and the first and second inorganic insulating films in the first opening part such that the active layer is exposed,

wherein a wiring is formed on the second inorganic insulating film and is in contact with the active layer through the contact hole,

wherein the capacitor has a first electrode formed from the same conductive film as the gate electrode, a second electrode formed from the same conductive film as the wiring, and a part of the first and second inorganic insulating films which overlap the first electrode and the second electrode in the second opening part, and

wherein a curvature radius of a surface of the organic resin film becomes longer continuously as the organic resin film separates from the first and second opening parts.

2. A semiconductor display device according to claim 1, wherein the organic resin film is a positive photosensitive organic resin film.

3. A semiconductor display device according to claim 1, wherein the semiconductor circuit is one of a booster circuit, a D/A conversion circuit of a capacity dividing type, a DRAM, an analog latch circuit, or a protective circuit.

4. A semiconductor display device according to claim 1, wherein the organic resin film is acrylic.

5. A semiconductor display device according to claim 1, wherein the organic resin film inclines at 30°

or more and 65°

or less with respect to the substrate on a tangent line thereof at the end of the first and second opening parts.

6. A semiconductor display device according to claim 1, wherein the first or second inorganic insulating film is silicon nitride, silicon oxide nitride, or aluminum oxide nitride.

7. A semiconductor display device comprising:

a pixel portion; and

a semiconductor circuit generating a signal for displaying an image on the pixel portion, the semiconductor circuit having a capacitor,

wherein the pixel portion and the semiconductor circuit comprise a thin film transistor, and the thin film transistor has an active layer, a gate electrode adjacent to the active layer with a gate insulating film interposed therebetween,

a first inorganic insulating film covering the thin film transistor,

an organic resin film formed in contact with the first inorganic insulating film, the organic resin film having a first opening part and a second opening part;

a second inorganic insulating film covering the organic resin film;

wherein the first and second inorganic insulating films are in contact with each other in the first opening part and the second opening part,

wherein a contact hole is formed in the gate insulating film and the first and second inorganic insulating films in the first opening part such that the active layer is exposed,

wherein a wiring is formed on the second inorganic insulating film and is in contact with the active layer through the contact hole,

wherein the capacitor has a first electrode formed from the same conductive film as the gate electrode, a second electrode formed from the same conductive film as the wiring, and a part of the first and second inorganic insulating films which overlap the first electrode and the second electrode in the second opening part, and

wherein a sectional shape of a surface of the organic resin film at ends of the first and second opening parts draws a parabola having a principal axis within a surface parallel with the substrate.

8. A semiconductor display device according to claim 7, wherein the organic resin film is a positive photosensitive organic resin film

9. A semiconductor display device according to claim 7, wherein the semiconductor circuit is one of a booster circuit, a D/A conversion circuit of a capacity dividing type, a DRAM, an analog latch circuit, or a protective circuit.

10. A semiconductor display device according to claim 7, wherein the organic resin film is acrylic.

11. A semiconductor display device according to claim 7, wherein the organic resin film inclines at 30°

or more and 65°

or less with respect to the substrate on a tangent line thereof at the end of the first and second opening parts.

12. A semiconductor display device according to claim 7, wherein the first or second inorganic insulating film is silicon nitride, silicon oxide nitride, or aluminum oxide nitride.

13. A semiconductor display device comprising:

a thin film transistor having an active layer, a gate electrode adjacent to the active layer with a gate insulating film interposed therebetween;

a capacitor; and

a light emitting element,

a first inorganic insulating film covering the thin film transistor;

an organic resin film formed in contact with the first inorganic insulating film, the organic resin film having a first opening part and a second opening part;

a second inorganic insulating film covering the organic resin film, wherein the first and second inorganic insulating films are in contact with each other in the first opening part and the second opening part;

a contact hole formed in the gate insulating film and the first and second inorganic insulating films in the first opening part such that the active layer is exposed;

a wiring formed on the second inorganic insulating film, the wiring being in contact with the active layer through the contact hole;

a pixel electrode being in contact with the wiring;

a second organic resin film formed on the second inorganic insulating film covering the wiring, the pixel electrode, and the second electrode;

the second organic resin film having a third opening part;

a third inorganic insulating film formed on the second organic resin film, the third inorganic insulating film having a fourth opening part in the third opening part; and

an electroluminescence layer and an opposed electrode laminated on the third inorganic insulating film so as to be in contact with the pixel electrode in the fourth opening part, and

wherein curvature radiuses of surfaces of the first, second, and third organic resin films become longer continuously, respectively, as the organic resin films separate from the first, second, and third opening parts, and

wherein the capacitor has a first electrode formed from the same conductive film as the gate electrode, a second electrode formed from the same conductive film as the wiring, and a part of the first and second inorganic insulating films which overlap the first electrode and the second electrode in the second opening part.

14. A semiconductor display device according to claim 13, wherein the first organic resin film is a positive photosensitive organic resin film

15. A semiconductor display device according to claim 13, wherein the first, second, or third organic resin film is acrylic.

16. A semiconductor display device according to claim 13, wherein the first, second, or third organic resin film inclines at 30°

or more and 65°

or less with respect to the substrate on a tangent line thereof at the end of the opening part.

17. A semiconductor display device according to claim 13, wherein the third inorganic insulating film is silicon nitride, silicon oxide nitride, or aluminum oxide nitride.

18. A semiconductor display device according to claim 13, wherein the first or second inorganic insulating film is silicon nitride, silicon oxide nitride, or aluminum oxide nitride.

19. A semiconductor display device comprising:

a thin film transistor having an active layer, a gate electrode adjacent to the active layer with a gate insulating film interposed therebetween;

a capacitor; and

a light emitting element,

a first inorganic insulating film covering the thin film transistor;

an organic resin film formed in contact with the first inorganic insulating film, the organic resin film having a first opening part and a second opening part;

a second inorganic insulating film covering the organic resin film, wherein the first and second inorganic insulating films are in contact with each other in the first opening part and the second opening part;

a contact hole formed in the gate insulating film and the first and second inorganic insulating films in the first opening part such that the active layer is exposed;

a wiring formed on the second inorganic insulating film, the wiring being in contact with the active layer through the contact hole;

a pixel electrode being in contact with the wiring;

a second organic resin film formed on the second inorganic insulating film covering the wiring, the pixel electrode, and the second electrode;

the second organic resin film having a third opening part;

a third inorganic insulating film formed on the second organic resin film, the third inorganic insulating film having a fourth opening part in the third opening part; and

an electroluminescence layer and an opposed electrode laminated on the third inorganic insulating film so as to be in contact with the pixel electrode in the fourth opening part, and

wherein a sectional shape of surfaces of the first, second, and third organic resin films at ends of the first, second, and third opening parts draws a parabola having a principal axis within a surface parallel with the substrate, and

wherein the capacitor has a first electrode formed from the same conductive film as the gate electrode, a second electrode formed from the same conductive film as the wiring, and a part of the first and second inorganic insulating films which overlap the first electrode and the second electrode in the second opening part., and

20. A semiconductor display device according to claim 19, wherein the first organic resin film is a positive photosensitive organic resin film

21. A semiconductor display device according to claim 19, wherein the first, second, or third organic resin film is acrylic.

22. A semiconductor display device according to claim 19, wherein the first, second, or third organic resin film inclines at 30°

or more and 65°

or less with respect to the substrate on a tangent line thereof at the end of the opening part.

23. A semiconductor display device according to claim 19, wherein the third inorganic insulating film is silicon nitride, silicon oxide nitride, or aluminum oxide nitride.

24. A semiconductor display device according to claim 19, wherein the first or second inorganic insulating film is silicon nitride, silicon oxide nitride, or aluminum oxide nitride.