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Precision zener diodes and methods of manufacturing precision zener diodes

  • US 20030189220A1
  • Filed: 04/08/2002
  • Published: 10/09/2003
  • Est. Priority Date: 04/08/2002
  • Status: Active Grant
First Claim
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1. A semiconductor device having a first electrode and a second electrode, the device comprising:

  • a semiconductor substrate layer of a substrate conductivity type and of a substrate resistivity;

    an epitaxial layer grown on the substrate layer, the epitaxial layer having an epitaxial layer conductivity type consistent with the substrate conductivity type, the epitaxial layer having an epitaxial layer resistivity greater than the substrate resistivity, the epitaxial layer having an epitaxial surface opposite to the substrate layer;

    an interior region of doped semiconductor material having an interior conductivity type consistent with the substrate conductivity type, the interior region extending into the epitaxial layer; and

    a junction layer of a junction conductivity type different from the substrate conductivity type formed in the epitaxial surface, the junction layer forming an interior P/N junction with the interior region and the junction layer forming a peripheral P/N junction with a peripheral portion of the device.

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