Low threshold microcavity light emitter
First Claim
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1. A vertical cavity surface emitter comprising a cavity spacer, wherein said cavity spacer contains a low refraction index confining layer.
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Abstract
Disclosed is a low threshold vertical cavity surface emitter having a low refraction index confining layer directly in the cavity spacer. This allows a ½ wavelength cavity spacer and a lateral size of as low as 2 μm. Also disclosed is a method of rapid temperature annealing to seal a III-V crystal and inhibit oxidative degradation.
31 Citations
40 Claims
- 1. A vertical cavity surface emitter comprising a cavity spacer, wherein said cavity spacer contains a low refraction index confining layer.
- 19. A semiconductor device having an exposed AlAs or AlGaAs surface sealed against oxidation by a rapid thermal anneal in a dry inert gas containing dry oxygen.
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26. A method of sealing an AlAs layer against oxidative decomposition comprising contacting said layer with a dense surface oxide formed by annealing in a dry inert gas ambient containing dry oxygen at a temperature of from about 400 to about 1000°
- C. for a time sufficient to seal said AlAs layer.
- View Dependent Claims (27, 28, 29)
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30. A vertical cavity surface emitter comprising:
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a first distributed Bragg reflector composed of layers of n-type AlAs and n-type GaAs and forming the bottom of said vertical cavity surface emitter;
a second distributed Bragg reflector composed of layers of p-type GaAs and forming the top of said vertical cavity surface emitter;
a spacer cavity of one-half wavelength vertical dimension disposed between said first distributed Bragg reflector and said second distributed Bragg reflector;
and wherein a low refractive index layer is disposed within said spacer cavity. - View Dependent Claims (31, 32, 33, 34)
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35. A vertical cavity surface emitting laser comprising a cavity spacer, a quantum well emitting region and a low refractive index layer, wherein said cavity spacer is a high refractive index layer of ½
- wavelength thickness, said a quantum well emitting region is at the upper or lower boundary of said cavity spacer and said low refractive index layer is formed adjacent the cavity spacer to serve as lateral index confinement.
- View Dependent Claims (36, 37)
- 38. A vertical cavity surface emitting laser comprising a cavity spacer, a quantum well emitting region and a low refractive index layer, wherein said cavity spacer is a high refractive index layer of one wavelength thickness, said a quantum well emitting region is at the upper or lower boundary of said cavity spacer and said low refractive index layer is formed adjacent the cavity spacer to serve as lateral index confinement.
Specification