Method for the production and configuration of organic field-effect transistors (ofet)
First Claim
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1. An organic field-effect transistor, comprising at least the following layers on a substrate:
- a semiconducting layer between a source electrode and a drain electrode, an insulation layer on above the semiconducting layer and a conductor layer, the conductor layer and at least one of the other two layers being patterned.
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Abstract
The invention relates to an economical and precise method for the production and configuration of OFETs, whereby the solubility of at least one functional polymer of an OFET is utilised to such a degree, that the functional polymer is deposited on the OFET, or a substrate, by means of a conventional printing process as for a colour.
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10 Claims
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1. An organic field-effect transistor, comprising at least the following layers on a substrate:
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a semiconducting layer between a source electrode and a drain electrode, an insulation layer on above the semiconducting layer and a conductor layer, the conductor layer and at least one of the other two layers being patterned. - View Dependent Claims (9)
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- 2. A method for producing an OFET by printing at least one functional polymer onto a substrate, the functional polymer first being applied in an ink-like consistency and then being printed onto the substrate.
Specification