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Method for the production and configuration of organic field-effect transistors (ofet)

  • US 20030190767A1
  • Filed: 01/06/2003
  • Published: 10/09/2003
  • Est. Priority Date: 07/07/2000
  • Status: Active Grant
First Claim
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1. An organic field-effect transistor, comprising at least the following layers on a substrate:

  • a semiconducting layer between a source electrode and a drain electrode, an insulation layer on above the semiconducting layer and a conductor layer, the conductor layer and at least one of the other two layers being patterned.

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