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Semiconductor thin flim forming method and semiconductor device

  • US 20030190777A1
  • Filed: 04/22/2003
  • Published: 10/09/2003
  • Est. Priority Date: 07/13/1998
  • Status: Active Grant
First Claim
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1. A semiconductor device including an active semiconductor film formed on an insulating substrate, at least a channel region of the active semiconductor film having a quasi-monocrystal state, which is a crystal state containing only grain boundaries having inclination angles of not more than 90 to a current direction.

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