Method for cleaning a process chamber
First Claim
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1. A method of cleaning a processing region of a deposition chamber, comprising:
- introducing a cleaning gas into a remote plasma source connected to the deposition chamber;
striking a plasma in the remote plasma source using a power of about 2 kilowatts or greater;
increasing the power applied by the remote plasma source to the struck plasma to between about 5 kilowatts and about 8 kilowatts, wherein the struck plasma comprises reactive species;
introducing helium into the processing region;
introducing the cleaning gas from the remote plasma source into the processing region, wherein the cleaning gas is flowed into the processing region at a rate of about 250 sccm or greater; and
delivering radio frequency (RF) power to the processing region.
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Abstract
Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.
56 Citations
33 Claims
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1. A method of cleaning a processing region of a deposition chamber, comprising:
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introducing a cleaning gas into a remote plasma source connected to the deposition chamber;
striking a plasma in the remote plasma source using a power of about 2 kilowatts or greater;
increasing the power applied by the remote plasma source to the struck plasma to between about 5 kilowatts and about 8 kilowatts, wherein the struck plasma comprises reactive species;
introducing helium into the processing region;
introducing the cleaning gas from the remote plasma source into the processing region, wherein the cleaning gas is flowed into the processing region at a rate of about 250 sccm or greater; and
delivering radio frequency (RF) power to the processing region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of cleaning a processing region of a deposition chamber, comprising:
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introducing a cleaning gas into a remote plasma source connected to the deposition chamber;
striking a plasma in the remote plasma source, wherein the struck plasma comprises reactive species;
introducing the cleaning gas from the remote plasma source into the processing region;
delivering radio frequency (RF) power to the processing region; and
terminating the radio frequency power. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A method of cleaning a processing region of a deposition chamber, comprising:
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introducing an inert gas and a cleaning gas into a remote plasma source connected to the deposition chamber;
striking a plasma in the remote plasma source, wherein the struck plasma comprises reactive species, and the plasma is struck using a power of about 2 kilowatts or greater in the remote plasma source;
increasing the power applied by the remote plasma source to the struck plasma to between about 5 kilowatts and about 8 kilowatts;
introducing the cleaning gas from the remote plasma source into the processing region;
introducing helium into the processing region;
delivering radio frequency (RF) power to the processing region;
terminating the radio frequency power;
terminating the flow of helium into the processing region; and
introducing argon into the processing region.
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Specification