Display device and method of fabricating the same
First Claim
1. A display device comprising a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate:
- wherein the semiconductor element comprises an activation layer, a gate insulating film in contact with the activation layer, a gate electrode opposed to the activation layer through the gate insulating film, a first insulating nitride film provided on an upper side of the activation layer, an organic resin film provided over the first insulating nitride film, a second insulating nitride film provided over the organic resin film and a wiring provided over the second insulating nitride film;
wherein an inner wall face of a first opening portion provided at the organic resin film is covered by the second insulating nitride film, further comprising;
a second opening portion provided at a laminated layer body including the gate insulating film, the first insulating nitride film and the second insulating nitride film on an inner side of the first opening portion;
wherein the activation layer and the wiring are connected through the first opening portion and the second opening portion; and
wherein the pixel electrode is provided at a layer on a lower side of the activation layer and connected to the semiconductor element through the wiring.
1 Assignment
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Accused Products
Abstract
To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.
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Citations
47 Claims
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1. A display device comprising a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate:
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wherein the semiconductor element comprises an activation layer, a gate insulating film in contact with the activation layer, a gate electrode opposed to the activation layer through the gate insulating film, a first insulating nitride film provided on an upper side of the activation layer, an organic resin film provided over the first insulating nitride film, a second insulating nitride film provided over the organic resin film and a wiring provided over the second insulating nitride film;
wherein an inner wall face of a first opening portion provided at the organic resin film is covered by the second insulating nitride film, further comprising;
a second opening portion provided at a laminated layer body including the gate insulating film, the first insulating nitride film and the second insulating nitride film on an inner side of the first opening portion;
wherein the activation layer and the wiring are connected through the first opening portion and the second opening portion; and
wherein the pixel electrode is provided at a layer on a lower side of the activation layer and connected to the semiconductor element through the wiring. - View Dependent Claims (6, 11, 16, 21, 26, 31)
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2. A display device comprising a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate:
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wherein the semiconductor element comprises an activation layer, a gate insulating film in contact with the activation layer, a gate electrode opposed to the activation layer through the gate insulating film, a first insulating nitride film provided on an upper side of the activation layer, an organic resin film provided over the first insulating nitride film, a second insulating nitride film provided over the organic resin film and a wiring provided above the second insulating nitride film;
wherein an inner wall face of a first opening portion provided at the organic resin film is covered by the second insulating nitride film, a bottom face of said first opening portion including a region in which the first insulating film and the second insulating film are brought into contact with each other over 0.3 through 3 μ
m, further comprising;
a second opening portion provided at a laminated layer body including the gate insulating film, the first insulating nitride film and the second insulating nitride film on an inner side of the first opening portion;
wherein the activation layer and the wiring are connected through the first opening portion and the second opening portion; and
wherein the pixel electrode is provided at a layer on a lower side of the activation layer and connected to the semiconductor element through the wiring. - View Dependent Claims (7, 12, 17, 22, 27, 32)
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3. A display device comprising a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate:
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wherein the semiconductor element comprises an activation layer, a gate insulating film in contact with the activation layer, a gate electrode opposed to the activation layer through the gate insulating film, a first insulating nitride film provided on an upper side of the activation layer, an acrylic film provided over the first insulating nitride film, a second insulating nitride film provided above the acrylic film and a wiring provided over the second insulating nitride film;
wherein an inner wall face of a first opening portion provided at the acrylic film is covered by the second insulating nitride film, further comprising;
a second opening portion provided at a laminated layer body including the gate insulating film, the first insulating nitride film and the second insulating nitride film on an inner side of the first opening portion;
wherein the activation layer and the wiring are connected through the first opening portion and the second opening portion; and
wherein the pixel electrode is provided at a layer on a lower side of the activation layer and connected to the semiconductor element through the wiring. - View Dependent Claims (8, 13, 18, 23, 28, 33)
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4. A display device comprising a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate:
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wherein the semiconductor element comprises an activation layer, a gate insulating film in contact with the activation layer, a gate electrode opposed to the activation layer through the gate insulating film, a first insulating nitride film provided on an upper side of the activation layer, an acrylic film provided over the first insulating nitride film, a second insulating nitride film provided over the acrylic film and a wiring provided over the second insulating nitride film;
wherein an inner wall face of a first opening portion provided at the acrylic film is covered by the second insulating nitride film, a bottom face of said first opening portion including a region in which the first insulating film and the second insulating film are brought into contact with each other over 0.3 through 3 μ
m, further comprising;
a second opening portion provided at a laminated layer body including the gate insulating film, the first insulating nitride film and the second insulating nitride film on an inner side of the first opening portion;
wherein the activation layer and the wiring are connected through the first opening portion and the second opening portion; and
wherein the pixel electrode is provided at a layer on a lower side of the activation layer and connected to the semiconductor element through the wiring. - View Dependent Claims (9, 14, 19, 24, 29, 34)
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5. A display device comprising a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate:
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wherein the semiconductor element comprises an activation layer, a gate insulating film in contact with the activation layer, a gate electrode opposed to the activation layer through the gate insulating film, a first insulating nitride film including argon provided on an upper side of the activation layer, a first organic resin film provided over the first insulating nitride film, a second insulating nitride film including argon provided over the organic resin film, a wiring provided over the second insulating nitride film, a second organic resin film provided over the wiring, a third insulating nitride film including argon provided over the second organic resin film and a metal film added with Li provided over the third insulating nitride film;
wherein an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by the second insulating nitride film, further comprising;
a second opening portion provided at a laminated layer body including the gate insulating film, the first insulating nitride film and the second insulating nitride film on an inner side of the first opening portion;
wherein the activation layer and the wiring are connected through the first opening portion and the second opening portion; and
wherein the pixel electrode is provided at a layer on a lower side of the activation layer and connected to the semiconductor element through the wiring. - View Dependent Claims (10, 15, 20, 25, 30, 35)
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36. A method of fabricating a display device comprising a method of fabricating a display device comprising the steps of
forming a pixel electrode covered by a base film on a substrate; -
forming a semiconductor film over the base film;
forming a gate insulating film over the semiconductor film;
forming a gate electrode over the gate insulating film;
forming an impurity region at the semiconductor film;
forming a first insulating nitride film over the gate electrode;
forming an organic resin film over the first insulating nitride film;
forming a first opening portion at the organic resin film over the impurity region;
forming a second insulating nitride film to cover the first opening portion;
forming a second opening portion by etching the second insulating nitride film, the first insulating nitride film and the gate insulating film at a bottom face of the first opening portion;
forming a wiring over the second insulating nitride film and connecting the impurity region and the wiring through the first opening portion and the second opening portion;
wherein in forming the first opening portion, the organic resin film is etched over the pixel electrode;
in forming the second opening portion, the pixel electrode is exposed by etching the second insulating nitride film, the first insulating nitride film, the gate insulating film and the base film and thereafter connecting the pixel electrode and the wiring. - View Dependent Claims (38, 40, 42, 44, 46)
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37. A method of fabricating a display device comprising a method of fabricating a display device comprising the steps of:
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forming a pixel electrode covered by a base film on a substrate;
forming a semiconductor film over the base film;
forming a gate insulating film over the semiconductor film;
forming a gate electrode over the gate insulating film;
forming an impurity region at the semiconductor film;
forming a first insulating nitride film over the gate electrode;
forming an acrylic film over the first insulating nitride film;
forming a first opening portion at the acrylic film over the impurity region;
forming a second insulating nitride film to cover the first opening portion;
forming a second opening portion by etching the second insulating nitride film, the first insulating nitride film and the gate insulating film at a bottom face of the first opening portion, forming a wiring over the second insulating nitride film and connecting the impurity region and the wiring through the first opening portion and the second opening portion;
wherein in forming the first opening portion, the acrylic film is etched over the pixel electrode, in forming the second opening portion, the pixel electrode is exposed by etching the second insulating nitride film, the first insulating nitride film, the gate insulating film and the base film and thereafter connecting the pixel electrode and the wiring. - View Dependent Claims (39, 41, 43, 45, 47)
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Specification