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Deposition of gate metallization for active matrix liquid crystal display (AMLCD) applications

  • US 20030194825A1
  • Filed: 04/10/2002
  • Published: 10/16/2003
  • Est. Priority Date: 04/10/2002
  • Status: Abandoned Application
First Claim
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1. A method of forming a transistor for use in an active matrix liquid crystal display (AMLCD), comprising:

  • providing a substrate having a dielectric layer deposited over source regions and drain regions formed thereon; and

    depositing a gate metal layer on the dielectric layer using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to a process chamber and modulating the flow of the inert gas with an alternating period of exposure to one of either a metal-containing precursor and a reducing gas.

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