Semiconductor device and display element using semiconductor device
First Claim
1. A semiconductor device comprising:
- an active layer;
a gate insulating film over the active layer;
a gate electrode facing an active layer by way of the gate insulating film;
a first inorganic insulating film formed over the active layer;
an SOG film formed over the first inorganic insulating film, said SOG film having a first opening;
a second inorganic insulating film formed over the SOG film; and
a wiring formed over the second inorganic insulating film;
wherein an inner wall surface of the first opening is covered with the second inorganic insulating film;
wherein a second opening formed in a laminated body including the gate insulating film, the first inorganic insulating film and the second inorganic insulating film is provided to the inside of the first opening; and
wherein the active layer and the wiring are connected to each other through the first opening and the second opening.
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Accused Products
Abstract
The present invention achieves the enhancement of stability of operational performance of a display device and the enlargement of margin of design in circuit designing. In a semiconductor device including a semiconductor, a gate insulation film which is brought into contact with the semiconductor, a gate electrode which faces an active layer by way of the gate insulation film, a first inorganic insulation film which is formed above the active layer, an SOG film which is formed on the first inorganic insulation film, and a second inorganic insulation film which is formed on the SOG film, and wiring which is formed on the second inorganic insulation film, an inner wall surface of a first opening portion formed in the SOG film is covered with the second inorganic insulation film and, at the same time, a second opening portion which is formed in a laminated body including the gate insulation film, the first inorganic insulation film and the second inorganic insulation film is provided to the inside of the first opening portion, and the semiconductor and the wiring are connected to each other through the first opening portion and the second opening portion.
177 Citations
16 Claims
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1. A semiconductor device comprising:
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an active layer;
a gate insulating film over the active layer;
a gate electrode facing an active layer by way of the gate insulating film;
a first inorganic insulating film formed over the active layer;
an SOG film formed over the first inorganic insulating film, said SOG film having a first opening;
a second inorganic insulating film formed over the SOG film; and
a wiring formed over the second inorganic insulating film;
wherein an inner wall surface of the first opening is covered with the second inorganic insulating film;
wherein a second opening formed in a laminated body including the gate insulating film, the first inorganic insulating film and the second inorganic insulating film is provided to the inside of the first opening; and
wherein the active layer and the wiring are connected to each other through the first opening and the second opening. - View Dependent Claims (3, 9, 16)
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2. A semiconductor device comprising:
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an active layer;
a gate insulating film over the active layer;
a gate electrode facing the active layer by way of the gate insulating film;
a first inorganic insulating film formed over the active layer;
an SOG film formed over the first inorganic insulating film, said SOG film having a first opening;
a second inorganic insulating film formed over the SOG film; and
a wiring formed over the second inorganic insulating film, wherein an inner wall surface of the first opening is covered with the second inorganic insulating film, wherein a region where the first inorganic insulating film and the second inorganic insulating film are brought into contact with each other by 0.3 to 3 μ
m in width is provided to a bottom surface of the first opening,wherein a second opening formed in a laminated film including the gate insulating film, the first inorganic insulating film and the second inorganic insulating film is provided to the inside of the first opening, and wherein the active layer and the wiring are connected to each other through the first opening and the second opening. - View Dependent Claims (4, 7, 10)
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5. A display device comprising a pixel portion over a substrate, the pixel portion including a plurality of pixels each comprising a semiconductor device and a holding capacitance which is connected to the semiconductor device, the semiconductor device comprising:
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an active layer;
a gate insulating film over the active layer;
a gate electrode facing the active layer by way of the gate insulating film;
a first inorganic insulating film formed over the active layer;
an SOG film formed over the first inorganic insulating film, said SOG film having a first opening;
a second inorganic insulating film formed over the SOG film; and
a wiring formed over the second inorganic insulating film, wherein an inner wall surface of the first opening is covered with the second inorganic insulating film;
wherein a second opening formed in a laminated body including the gate insulating film, the first inorganic insulating film and the second inorganic insulating film is provided to the inside of the first opening;
wherein the active layer and the wiring are connected to each other through the first opening and the second opening; and
wherein the holding capacitance includes the first inorganic insulating film and the second insulating film as dielectrics. - View Dependent Claims (8, 11)
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6. A display device comprising a pixel portion over a substrate, the pixel portion including a plurality of pixels each comprising a semiconductor device and a holding capacitance connected to the semiconductor device, the semiconductor device comprising:
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an active layer;
a gate insulating film over the active layer;
a gate electrode facing the active layer by way of the gate insulating film;
a first inorganic insulating film formed over the active layer;
an SOG film formed over the first inorganic insulating film, said SOG film having a first opening;
a second inorganic insulating film formed over the SOG film; and
a wiring formed over the second inorganic insulating film, wherein an inner wall surface of the first opening is covered with the second inorganic insulating film, wherein a region where the first inorganic insulating film and the second insulating film are brought into contact with each other with a contact length of 0.3 to 3 μ
m in width is provided to a bottom surface of the first opening,wherein a second opening formed in a laminated body including the gate insulating film, the first inorganic insulating film and the second inorganic insulating film is provided to the inside of the first opening, wherein the active layer and the wiring are connected to each other through the first opening and the second opening, and wherein the holding capacitance includes the first inorganic insulating film and the second insulating film as dielectrics. - View Dependent Claims (12, 14, 15)
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13. A semiconductor device comprising:
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an active layer;
a gate insulating film over the active layer;
a gate electrode facing an active layer by way of the gate insulating film;
a first inorganic insulating film formed over the active layer;
a film formed by applying solution containing a thin film forming material over the first inorganic insulating film, said film having a first opening;
a second inorganic insulating film formed over said film having said first opening; and
a wiring formed over the second inorganic insulating film;
wherein an inner wall surface of the first opening is covered with the second inorganic insulating film;
wherein a second opening formed in a laminated body including the gate insulating film, the first inorganic insulating film and the second inorganic insulating film is provided to the inside of the first opening; and
wherein the active layer and the wiring are connected to each other through the first opening and the second opening.
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Specification