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High-voltage vertical transistor with a multi-layered extended drain structure

  • US 20030197220A1
  • Filed: 03/21/2003
  • Published: 10/23/2003
  • Est. Priority Date: 09/07/2001
  • Status: Active Grant
First Claim
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1. A vertical high-voltage transistor comprising:

  • a drain region of a first conductivity type;

    at least one source region of the first conductivity type;

    at least one body region of a second conductivity type opposite to the first conductivity type, the at least one body region adjoining the source region;

    a plurality of drift regions of the first conductivity type arranged in parallel and extending in a first direction from the drain region to the at least one body region, adjacent ones of the drift regions being separated in a second direction orthogonal to the first direction by a dielectric layer;

    at least one field plate member disposed within the dielectric layer, the at least one field plate member being fully insulated from the drift regions; and

    an insulated gate disposed between the at least one field plate member and the at least one body region, with a channel region being defined in the at least one body region adjacent the insulated gate between the at least one source region and at least one of the drift regions.

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