Film deposition method

• US 20030198744A1
• Filed: 03/06/2003
• Published: 10/23/2003
• Est. Priority Date: 04/23/2002
• Status: Active Grant

• Current Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Original Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Inventors: Iwata, Kenichi, Okada, Yoshikatsu
• Granted Patent: US 6,803,075 B2
• Time in Patent Office: Days
• US Class Current: 427/294
• CPC Class Codes: C23C 14/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 14/228 Gas flow assisted PVD deposition
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/32051 Deposition of metallic or metal-silicide layers
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213

Abstract

A film deposition method includes the steps of preparing a first chamber, a second chamber, and a transport connector which connects the first chamber and the second chamber with each other, setting a pressure in the second chamber to be lower than a pressure in the first chamber, and introducing a plurality of kinds of particles into the second chamber using a differential pressure between the pressure in the first chamber and the pressure in the second chamber so that the particles collide with a substrate placed in the second chamber to form a film on the substrate. The plurality of kinds of particles include particles of a sublimable substance and particles of a material for forming the film on the substrate in the second chamber. Consequently, cleaning by the sublimable substance and film deposition by the material for forming the film are performed simultaneously.

Claims

1. A film deposition method comprising the steps of:

(A) preparing a first chamber, a second chamber, and a transport connector which connects the first chamber and the second chamber with each other;

(B) setting a pressure in the second chamber lower than a pressure in the first chamber; and

(C) introducing a plurality of kinds of particles into the second chamber using a differential pressure between the pressure in the first chamber and the pressure in the second chamber so that the plurality of kinds of particles collide with a substrate placed in the second chamber to form a film on the substrate,

wherein the plurality of kinds of particles comprise particles of a sublimable substance and particles of a material for forming the film on the substrate in the second chamber.

2. A film deposition method according to claim 1, including the steps of preliminarily placing the particles of the material for forming the film in the first chamber.

3. A film deposition method according to claim 1, including the steps of generating the particles of the material for forming the film in the first chamber.

4. A film deposition method according to claim 1, wherein the sublimable substance is selected from the group consisting of carbon dioxide, iodine, camphor, and naphthalene.

5. A film deposition method according to claim 1, including feeding the particles of the sublimable substance into the transport connector located between the first chamber and the second chamber.

6. A film deposition method according to claim 1, including placing one end of the transport connector in the first chamber and placing the other end of the transport connector in the second chamber, the end of the transport connector placed in the second chamber being provided with a nozzle.