Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
First Claim
1. A processing apparatus comprising:
- a chamber for holding a substrate that is to be processed;
a sprayed film formed on an inner surface of the chamber and containing a compound of a III-a element of the periodic table; and
a processing mechanism for processing a substrate held in the chamber.
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Abstract
A processing apparatus of the present invention has a mounted chamber holding a semiconductor wafer and having members for work-processing the substrate under any of heating, plasma and process gas or a combination of them, in which a film of Al2O3 and Y2O3 is formed on an inner wall surface of the chamber and on those exposed surface of the members within the chamber and has a high-corrosion resistance and insulating property and, when the process gas is introduced onto a processing surface of a semiconductor wafer and diffused into it, any product is less liable to be deposited on a plasma generation area and on those members held within the chamber.
312 Citations
27 Claims
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1. A processing apparatus comprising:
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a chamber for holding a substrate that is to be processed;
a sprayed film formed on an inner surface of the chamber and containing a compound of a III-a element of the periodic table; and
a processing mechanism for processing a substrate held in the chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 26, 27)
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11. A processing apparatus comprising:
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a lower chamber containing a susceptor for holding a substrate that is to be processed;
an upper chamber provided above the lower chamber;
antenna means arranged around the upper chamber, for generating an induction magnetic field in the upper chamber and on the substrate;
high-frequency wave applying means for applying high-frequency power to the antenna means;
gas-supplying means for supplying a plurality of process gases onto the substrate in the lower chamber;
gas-exhausting means for exhausting the process gases from the upper and lower chambers; and
a film formed by sprayed on an inner surface of the upper chamber and containing a compound of a III-a element of the periodic table, for preventing corrosion from taking place while the substrate is being processed, wherein an induction electromagnetic field is generated in the upper and lower chambers, generating a plasma, and the plasma is applied to the substrate, thereby to process the substrate.
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12. A processing apparatus comprising:
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a lower chamber containing a susceptor for holding a substrate that is to be processed;
an upper chamber provided above the lower chamber;
antenna means arranged around the upper chamber, for generating an induction magnetic field in the upper chamber and on the substrate;
high-frequency wave applying means for applying high-frequency power to the antenna means;
a gas-supplying means for shaped like a ring, surrounding an upper part of the lower chamber, and supplies the process gases and a plasma-generating gas into the lower chamber so that the gases may mix at a position above the substrate held on the susceptor; and
gas-exhausting means for exhausting the process gases from the upper and lower chambers, wherein an induction electromagnetic field is generated in the upper chamber, generating a plasma, and the plasma is applied to the substrate, thereby to process the substrate. - View Dependent Claims (25)
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Specification