Semiconductor device and method of manufacturing same

• US 20030201447A1
• Filed: 04/23/2003
• Published: 10/30/2003
• Est. Priority Date: 04/24/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kuwabara, Hideaki, Seo, Satoshi, Yamazaki, Shunpei
• Granted Patent: US 7,786,496 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: G01J 1/4228 arrangements with two or more detectors, e.g. for sensitivity compensation
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 33/0041 characterised by field-effect operation
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 50/813 characterised by their shape
• CPC Class Codes: H10K 50/818 Reflective anodes, e.g. ITO combined with thick metallic layers
• CPC Class Codes: H10K 50/82 Cathodes
• CPC Class Codes: H10K 50/828 Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/856 comprising reflective means
• CPC Class Codes: H10K 50/87 Arrangements for heating or cooling
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/30 Devices specially adapted for multicolour light emission
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 59/38 : comprising colour filters or colour changing media [CCM]
• CPC Class Codes: H10K 59/80515 : characterised by their shape
• CPC Class Codes: H10K 59/80518 : Reflective anodes, e.g. ITO combined with thick metallic layers
• CPC Class Codes: H10K 59/80522 : combined with auxiliary electrodes
• CPC Class Codes: H10K 59/80524 : Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 59/878 : comprising reflective means
• CPC Class Codes: H10K 59/8794 : Arrangements for heating and cooling
• CPC Class Codes: H10K 71/00 : Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 77/10 : Substrates, e.g. flexible substrates
• CPC Class Codes: Y02E 10/549 : Organic PV cells
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.

Claims

1. A semiconductor device comprising:

a field effect transistor provided on a semiconductor substrate;

a light emitting element comprising a first electrode connected to the field effect transistor, a layer containing an organic compound on the first electrode, and a second electrode on the layer; and

an insulating film covering an end portion of the first electrode,

wherein the first electrode has an inclined surface directed toward a center of the first electrode, and the inclined surface reflects light emitted from the layer containing an organic chemical compound.

2. The semiconductor device according to claim 1, wherein the second electrode comprises a conductive film permitting permeation of light.

3. The semiconductor device according to claims 1, wherein the first electrode is concave-shaped and formed in self-alignment with the insulation as a mask.

4. The semiconductor device according to claim 1, wherein the first electrode is an anode and the second electrode is a cathode.

5. The semiconductor device according to claim 1, wherein the first electrode is a cathode and the second electrode is an anode.

6. The semiconductor device according to claim 1, wherein the first electrode is a part of a drain electrode or a source electrode of the field effect transistor.

7. The semiconductor device according to claim 1, wherein the first electrode is made of a different material from that of a drain electrode or a source electrode of the field effect transistor.

8. The semiconductor device according to 1, wherein an inclination angle of the inclined surface is more than 30°

but less than 70°

.

9. The semiconductor device according to claim 1, wherein the insulation covering the end of the first electrode has a curved surface having a radius of curvature at an upper end thereof and the radius of curvature is 0.2 μ

m to 0.3 μ

m.

10. The semiconductor device according to claim 1, wherein the layer containing an organic chemical compound is made of a red light emitting material, or a green light emitting material, or a blue light emitting material.

11. The semiconductor device according to claim 1, wherein the layer containing an organic chemical compound is made of a white light emitting material, and combines with a color filter provided on a sealing agent.

12. The semiconductor device according to any one of claim 1, wherein the layer containing an organic chemical compound is made of a monochromatic light emitting material, and combines with a color conversion layer or a color layer provided on a sealing agent.

13. The semiconductor device according to any one of claim 1, wherein the field effect transistor is a MISFET, MOSFET, or a TFT.

14. The semiconductor device according to of claim 1, wherein a CPU, memory element, thin film diode, photoelectric transducer, or a resistive element is provided on the semiconductor substrate.

15. The semiconductor device according to claim 1, the semiconductor device is one selected from the group consisting of a video camera, digital camera, goggle type display, car navigation, DVD player, electronic game equipment, or a portable information terminal.

16. A semiconductor device comprising a luminescent element comprising

a field effect transistor provided on a semiconductor substrate;

a light emitting element comprising a first electrode connected to the field effect transistor, a layer containing an organic compound on the first electrode, and a second electrode on the layer; and

an insulating film covering an end portion of the first electrode,

wherein a center of the first electrode is concave-shaped to have a smaller film thickness than that of the end thereof.

17. The semiconductor device according to claim 16, wherein the second electrode comprises a conductive film permitting permeation of light.

18. The semiconductor device according to claims 16, wherein the first electrode is concave-shaped and formed in self-alignment with the insulation as a mask.

19. The semiconductor device according to claim 16, wherein the first electrode is an anode and the second electrode is a cathode.

20. The semiconductor device according to claim 16, wherein the first electrode is a cathode and the second electrode is an anode.

21. The semiconductor device according to claim 16, wherein the first electrode is a part of a drain electrode or a source electrode of the field effect transistor.

22. The semiconductor device according to claim 16, wherein the first electrode is made of a different material from that of a drain electrode or a source electrode of the field effect transistor.

23. The semiconductor device according to claim 16, wherein the first electrode comprises an inclined surface directed toward a center thereof, and an inclination angle is more than 30°

but less than 70°

.

24. The semiconductor device according to claim 16, wherein the insulation covering the end of the first electrode has a curved surface having a radius of curvature at an upper end thereof and the radius of curvature is 0.2 μ

m to 0.3 μ

m.

25. The semiconductor device according to claim 16, wherein the layer containing an organic chemical compound is made of a red light emitting material, or a green light emitting material, or a blue light emitting material.

26. The semiconductor device according to claim 16, wherein the layer containing an organic chemical compound is made of a white light emitting material, and combines with a color filter provided on a sealing agent.

27. The semiconductor device according to any one of claim 16, wherein the layer containing an organic chemical compound is made of a monochromatic light emitting material, and combines with a color conversion layer or a color layer provided on a sealing agent.

28. The semiconductor device according to any one of claim 16, wherein the field effect transistor is a MISFET, MOSFET, or a TFT.

29. The semiconductor device according to of claim 16, wherein a CPU, memory element, thin film diode, photoelectric transducer, or a resistive element is provided on the semiconductor substrate.

30. The semiconductor device according to claim 16, the semiconductor device is one selected from the group consisting of a video camera, digital camera, goggle type display, car navigation, DVD player, electronic game equipment, or a portable information terminal.

31. A semiconductor device comprising a luminescent element comprising

a field effect transistor provided on a semiconductor substrate;

a light emitting element comprising a first electrode connected to the field effect transistor, a layer containing an organic compound on the first electrode, and a second electrode on the layer; and

an insulating film covering an end portion of the first electrode,

wherein the first electrode has a multi-layer, and the number of the multi-layer at a center of the first electrode is greater than that at an end thereof.

32. The semiconductor device according to claim 31, wherein the second electrode comprises a conductive film permitting permeation of light.

33. The semiconductor device according to claim 31, wherein the first electrode is concave-shaped and formed in self-alignment with the insulation as a mask.

34. The semiconductor device according to claim 31, wherein the first electrode is an anode and the second electrode is a cathode.

35. The semiconductor device according to claim 31, wherein the first electrode is a cathode and the second electrode is an anode.

36. The semiconductor device according to claim 31, wherein the first electrode is a part of a drain electrode or a source electrode of the field effect transistor.

37. The semiconductor device according to claim 31, wherein the first electrode is made of a different material from that of a drain electrode or a source, electrode of the field effect transistor.

38. The semiconductor device according to 31, wherein the first electrode comprises an inclined surface directed toward a center thereof, and an inclination angle is more than 30°

but less than 70°

.

39. The semiconductor device according to claim 31, wherein the insulation covering the end of the first electrode has a curved surface having a radius of curvature at an upper end thereof and the radius of curvature is 0.2 μ

m to 0.3 μ

m.

40. The semiconductor device according to claim 31, wherein the layer containing an organic chemical compound is made of a red light emitting material, or a green light emitting material, or a blue light emitting material.

41. The semiconductor device according to claim 31, wherein the layer containing an organic chemical compound is made of a white light emitting material, and combines with a color filter provided on a sealing agent.

42. The semiconductor device according to any one of claim 31, wherein the layer containing an organic chemical compound is made of a monochromatic light emitting material, and combines with a color conversion layer or a color layer provided on a sealing agent.

43. The semiconductor device according to any one of claim 31, wherein the field effect transistor is a MISFET, MOSFET, or a TFT.

44. The semiconductor device according to of claim 31, wherein a CPU, memory element, thin film diode, photoelectric transducer, or a resistive element is provided on the semiconductor substrate.

45. The semiconductor device according to claim 31, the semiconductor device is one selected from the group consisting of a video camera, digital camera, goggle type display, car navigation, DVD player, electronic game equipment, or a portable information terminal.

51. The method according to any one of claims 45, wherein the field effect transistor is a MISFET, MOSFET, or a TFT.

46. A method of manufacturing a semiconductor device having a light emitting element comprising an anode, a layer containing an organic compound on the anode, and a cathode on the layer containing an organic compound, the method comprising:

forming a field effect transistor on a semiconductor substrate;

forming an insulating film covering an end portion of a first electrode comprising a laminated metallic layers, wherein the first electrode is a part of a drain electrode or a source electrode of the field effect transistor;

performing etching with the insulating film as a mask to thin a center of the first electrode so that an inclined surface of the first electrode is exposed along an edge portionof the first electrode;

forming the layer containing an organic compound on the center and the inclined surface of the first electrode; and

forming a second electrode comprising a metallic thin film permitting permeation of light, on the layer containing an organic compound.

47. The method according to claim 46, wherein the first electrode comprises a laminated light-reflective metallic layers and a metallic layer serving as a stopper for etching, the light-reflective metallic layer is subjected to etching, and a light-reflective metallic material is exposed to the inclined surface.

48. The method according to claim 46, wherein the first electrode is an anode comprising a metallic layer having a greater work function than that of the second electrode.

49. The method according to any one of claim 46, wherein the first electrode comprises a lamination of a first metallic layer containing titanium, second metallic layer containing titanium nitride or tungsten nitride, third metallic layer containing aluminum, and a fourth metallic layer containing titanium nitride.

50. The method according to any one of claims 46, wherein the insulating film covering the end of the first electrode has a curved surface having a radius of curvature at an upper end thereof and the radius of curvature is 0.2 μ

m to 0.3 μ

m.

52. A semiconductor device comprising:

a field effect transistor provided on a semiconductor substrate;

a light emitting element comprising a first electrode connected to the field effect transistor, a layer containing an organic compound on the first electrode, and a second electrode on the layer; and

an insulating film covering an end portion of the first electrode,

wherein the first electrode has a depression, and a bottom width of the depression is smaller than an top width of the depression.

53. The semiconductor device according to claim 52, wherein the second electrode comprises a conductive film permitting permeation of light.

54. The semiconductor device according to claim 52, wherein the first electrode is concave-shaped and formed in self-alignment with the insulation as a mask.

55. The semiconductor device according to claim 52, wherein the first electrode is an anode and the second electrode is a cathode.

56. The semiconductor device according to claim 52;

wherein the first electrode is a cathode and the second electrode is an anode.

57. The semiconductor device according to claim 52, wherein the first electrode is a part of a drain electrode or a source electrode of the field effect transistor.

58. The semiconductor device according to claim 52, wherein the first electrode is made of a different material from that of a drain electrode or a source electrode of the field effect transistor.

59. The semiconductor device according to 52, wherein the first electrode comprises an inclined surface directed toward a center thereof, and an inclination angle is more than 30°

but less than 70°

.

60. The semiconductor device according to claim 52, wherein the insulation covering the end of the first electrode has a curved surface having a radius of curvature at an upper end thereof and the radius of curvature is 0.2 μ

m to 0.3 μ

m.

61. The semiconductor device according to claim 52, wherein the layer containing an organic chemical compound is made of a red light emitting material, or a green light emitting material, or a blue light emitting material.

62. The semiconductor device according to claim 52, wherein the layer containing an organic chemical compound is made of a white light emitting material, and combines with a color filter provided on a sealing agent.

63. The semiconductor device according to any one of claim 52, wherein the layer containing an organic chemical compound is made of a monochromatic light emitting material, and combines with a color conversion layer or a color layer provided on a sealing agent.

64. The semiconductor device according to any one of claim 52, wherein the field effect transistor is a MISFET, MOSFET, or a TFT.

65. The semiconductor device according to of claim 52, wherein a CPU, memory element, thin film diode, photoelectric transducer, or a resistive element is provided on the semiconductor substrate.

66. The semiconductor device according to claim 52, the semiconductor device is one selected from the group consisting of a video camera, digital camera, goggle type display, car navigation, DVD player, electronic game equipment, or a portable information terminal.