Method for manufacturing a dynamic quantity detection device
First Claim
1. A method for manufacturing a dynamic quantity detection device that is formed by bonding a semiconductor chip that includes a detection element for detecting a dynamic quantity to a stand using a bonding layer, the method comprising:
- forming a semiconductor chip that includes a detection element used for correlating a dynamic quantity to be detected to an electric quantity and a plurality of processing circuit elements used for making up a circuit that processes the electric quantity;
placing a bonding layer on a stand;
placing the semiconductor chip on the bonding layer;
bonding the semiconductor chip to the stand by sintering the bonding layer; and
annealing the semiconductor chip in an atmosphere that contains hydrogen in order to cure a change in a characteristic of one of the processing circuit elements, wherein the change is caused during the bonding the semiconductor chip.
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Accused Products
Abstract
A method for manufacturing a dynamic quantity detection device that is formed by bonding a semiconductor chip that includes a detection element for detecting a dynamic quantity to a stand using a bonding layer includes: forming a semiconductor chip that includes a detection element used for correlating a dynamic quantity to be detected to an electric quantity and a plurality of processing circuit elements used for making up a circuit that processes the electric quantity; placing a bonding layer on a stand; placing the semiconductor chip on the bonding layer; bonding the semiconductor chip to the stand by sintering the bonding layer; and annealing the semiconductor chip in an atmosphere that contains hydrogen in order to cure a change, which is caused during the bonding of the semiconductor chip, in a characteristic of one of the processing circuit elements.
17 Citations
9 Claims
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1. A method for manufacturing a dynamic quantity detection device that is formed by bonding a semiconductor chip that includes a detection element for detecting a dynamic quantity to a stand using a bonding layer, the method comprising:
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forming a semiconductor chip that includes a detection element used for correlating a dynamic quantity to be detected to an electric quantity and a plurality of processing circuit elements used for making up a circuit that processes the electric quantity;
placing a bonding layer on a stand;
placing the semiconductor chip on the bonding layer;
bonding the semiconductor chip to the stand by sintering the bonding layer; and
annealing the semiconductor chip in an atmosphere that contains hydrogen in order to cure a change in a characteristic of one of the processing circuit elements, wherein the change is caused during the bonding the semiconductor chip. - View Dependent Claims (2, 3, 4)
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5. A method for manufacturing a dynamic quantity detection device that is formed by bonding a semiconductor chip that includes a detection element for detecting a dynamic quantity to a stand using a bonding layer, the method comprising:
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forming a semiconductor chip that includes a detection element used for correlating a dynamic quantity to be detected to an electric quantity and a plurality of processing circuit elements used for making up a circuit that processes the electric quantity;
placing a bonding layer on a stand;
placing the semiconductor chip on the bonding layer;
bonding the semiconductor chip to the stand by sintering the bonding layer; and
compensating a change in a characteristic of one of the processing circuit elements by trimming, wherein the change is caused during the bonding the semiconductor chip. - View Dependent Claims (6, 7, 8, 9)
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Specification