SINGLE MASK TRENCH FRED WITH ENLARGED SCHOTTKY AREA

• US 20030203533A1
• Filed: 04/25/2002
• Published: 10/30/2003
• Est. Priority Date: 04/25/2002
• Status: Active Grant

• Current Assignee: Siliconix Technology CV (Vishay Intertechnology Incorporated)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Bol, Igor
• Granted Patent: US 6,656,843 B2
• Time in Patent Office: Days
• US Class Current: 438/94
• CPC Class Codes: H01L 21/28537 Deposition of Schottky electrodes
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

A single mask process is described for making a trench type fast recovery process. The single mask defines slots in a photoresist for locally removing strips of nitride and oxide from atop silicon and for subsequently etching trenches in the silicon. A boron implant is carried out in the bottoms of the trenches to form local P/N junctions. The oxide beneath the nitride is then fully stripped in the active area and only partly stripped in the termination area in which the trenches are wider spaced than in the active area. Aluminum is then deposited atop the active area and in the trenches, but is blocked from contact with silicon in the active area by the remaining nitride layer.

Claims

1. A process for the manufacture of a trench type diode comprising the steps of:

a) forming a field oxide layer atop the surface of a silicon die portion of a wafer and forming a nitride layer atop the field oxide;

b) opening a first plurality of spaced trenches in an active area of said die portion which have a first spacing from one another and simultaneously opening at least one trench in a termination region;

said at least one trench being spaced from an adjacent one of said plurality of trenches by a spacing greater than said first spacing;

c) etching the oxide beneath said nitride to completely remove the oxide in said active area and only partly removing the oxide in said termination area whereby the surface of the silicon in the active area is exposed; and

depositing a Schottky-forming metal atop said active area and into all of said trenches.

2. The process of claim 1, wherein the nitride layer remaining in said termination area after the partial removal of said oxide layer forms a shadow mask to permit metal deposition only into said trenches in said termination area.

3. The process of claim 1, which includes the step of implanting and diffusing a junction-forming impurity into the bottom of each of said trenches, thereby to form respective P/N junctions.

4. The process of claim 1, wherein said metal contacts the walls of said slots and the mesa-top surfaces between said trenches to form a large area Schottky junction to said silicon.

5. The process of claim 2, which includes the step of implanting and diffusing a junction-forming impurity into the bottom of each of said trenches, thereby to form respective P/N junctions.

6. The process of claim 2, wherein said metal contacts the walls of said slots and the mesa-top surfaces between said trenches to form a large area Schottky contact to said silicon.

7. The process of claim 3, wherein said metal contacts the walls of said slots and the mesa-top surfaces between said trenches to form a large area Schottky contact to said silicon.

8. The process of claim 5, wherein said metal contacts the walls of said slots and the mesa-top surfaces between said trenches to form a large area Schottky contact to said silicon.

9. The process of claim 1, which includes the step of implanting a blanket implant of a species having the conductivity type of said wafer into said surface before forming said field oxide.

10. The process of claim 2, which includes the step of implanting a blanket implant of a species having the conductivity type of said wafer into said surface before forming said field oxide.

11. The process of claim 3, which includes the step of implanting a blanket implant of a species having the conductivity type of said wafer into said surface before forming said field oxide.

12. The process of claim 4, which includes the step of implanting a blanket implant of a species having the conductivity type of said wafer into said surface before forming said field oxide.

13. The process of claim 8, which includes the step of implanting a blanket implant of a species having the conductivity type of said wafer into said surface before forming said field oxide.