Semiconductor device including trench with at least one of an edge of an opening and a bottom surface being round
First Claim
1. A method of fabricating a semiconductor device, comprising the steps of:
- (a) anisotropically etching a substrate made of semiconductor to form a trench extending in a direction of the thickness of said substrate;
(b) performing a first thermal oxidation to form a first sacrificial oxide film in said trench;
(c) removing said first sacrificial oxide film;
(d) performing a second thermal oxidation to form a second sacrificial oxide film in said trench after said step (c);
(e) removing said second sacrificial oxide film;
(f) forming an insulating film comprising a part of a control electrode in said trench after said step (e); and
(g) filling said trench to form said control electrode opposed to said substrate through said insulating film comprising said part of said control electrode.
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Accused Products
Abstract
There is disclosed a method of fabricating a semiconductor device which includes the steps of forming a trench (4), and repeating the formation and removal of an oxide film (a sacrificial oxide film) twice to provide a rounded configuration (5b) of an opening portion of the trench (4) and a rounded configuration (6b) of a bottom thereof and to draw defects in a semiconductor layer into a silicon oxide film (8), reducing the defects adjacent the inner wall of the trench (4), whereby electric field concentration on a gate is prevented and the mobility of carriers in channels is improved for an improvement in characteristic, particularly an on-state voltage, of a power device. (FIG. 5)
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Citations
20 Claims
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1. A method of fabricating a semiconductor device, comprising the steps of:
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(a) anisotropically etching a substrate made of semiconductor to form a trench extending in a direction of the thickness of said substrate;
(b) performing a first thermal oxidation to form a first sacrificial oxide film in said trench;
(c) removing said first sacrificial oxide film;
(d) performing a second thermal oxidation to form a second sacrificial oxide film in said trench after said step (c);
(e) removing said second sacrificial oxide film;
(f) forming an insulating film comprising a part of a control electrode in said trench after said step (e); and
(g) filling said trench to form said control electrode opposed to said substrate through said insulating film comprising said part of said control electrode. - View Dependent Claims (2, 3)
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4. A method of fabricating a semiconductor device, comprising the steps of:
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(a) anisotropically etching a substrate made of semiconductor to form a trench having an aspect ratio of from 2 to 30 and extending in a direction of the thickness of said substrate;
(b) performing a thermal oxidation in an atmosphere of oxygen at a temperature not less than 1000°
C. to form in said trench a sacrificial oxide film having a thickness one-tenth to three-tenths the size of an opening portion of said trench;
(c) removing said sacrificial oxide film;
(d) forming an insulating film comprising a part of a control electrode in said trench after said step (c); and
(e) filling said trench to form said control electrode opposed to said substrate through said insulating film comprising said part of said control electrode.
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5. A method of fabricating a semiconductor device, comprising the steps of:
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(a) anisotropically etching a substrate made of semiconductor to form a trench extending in a direction of the thickness of said substrate;
(b) performing a thermal oxidation to form a sacrificial oxide film in said trench;
(c) removing said sacrificial oxide film;
(d) oxidizing an inside of said trench at an atmosphere of oxygen at a temperature not less than 1000°
C. to form an insulating film comprising a part of a control electrode after said step (c); and
(e) filling said trench to form said control electrode opposed to said substrate through said insulating film comprising said part of said control electrode. - View Dependent Claims (6)
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7. A method of fabricating a semiconductor device, comprising the steps of:
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(a) anisotropically etching a substrate made of semiconductor to form a trench extending in a direction of the thickness of said substrate;
(b) providing on said substrate a mask having an edge backing away a predetermined distance from an opening portion of said trench;
(c) performing an isotropic dry etching on said substrate by using said mask;
(d) oxidizing an inside of said trench in an atmosphere of steam at a temperature not more than 1000°
C. after said step (c); and
(e) filling said trench to form a control electrode opposed to said substrate through said insulating film comprising a part of said control electrode. - View Dependent Claims (8, 9, 10, 11)
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12. A method of fabricating a semiconductor device, comprising the steps of:
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(a) providing a semiconductor layer on a substrate including an insulating film at least on its surface;
(b) anisotropically etching said semiconductor layer to form a trench extending in a direction of the thickness of said semiconductor layer;
(c) performing a thermal oxidation to form a sacrificial oxide film in said trench;
(d) removing a part of said substrate which lies under said trench and said sacrificial oxide film;
(e) oxidizing an inside of said trench in an atmosphere of oxygen at a temperature not less than 1000°
C. to form an isolation oxide film after said step (d); and
(f) filling said trench with a burying material.
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13. A method of fabricating a semiconductor device, comprising the steps of:
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(a) providing a semiconductor layer on a substrate including an insulating film at least on its surface;
(b) anisotropically etching said semiconductor layer to form a trench extending in a direction of the thickness of said semiconductor layer;
(c) removing a predetermined distance of a part of said insulating film on said substrate which lies under said trench to form a recess having a diameter greater than a diameter of said trench;
(d) performing an isotropic dry etching on said semiconductor layer;
(e) oxidizing an inside of said trench in an atmosphere of steam at a temperature not more than 1000°
C. to form an isolation oxide film after said step (d); and
(f) filling said trench with a burying material. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A method of fabricating a semiconductor device, comprising the steps of:
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(a) providing a semiconductor layer on a substrate including an insulating film at least on its surface;
(b) anisotropically etching said semiconductor layer to form a trench extending in a direction of the thickness of said semiconductor layer;
(c) performing a thermal oxidation to form a sacrificial oxide film in said trench;
(d) removing a part of said substrate which lies under said trench and said sacrificial oxide film;
(e) forming a polycrystalline semiconductor layer on an inner wall of said trench;
(f) oxidizing said polycrystalline semiconductor layer to form an isolation oxide film; and
(g) filling said trench with a burying material.
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20. A method of fabricating a semiconductor device, comprising the steps of:
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(a) providing a semiconductor layer on a substrate including a semiconductor oxide film;
(b) anisotropically etching said semiconductor layer to form a trench having an aspect ratio of from 2 to 30 and extending in a direction of the thickness of said semiconductor layer;
(c) performing a thermal oxidation in an atmosphere of oxygen at a temperature not less than 1000°
C. to form in said trench a sacrificial oxide film having a thickness one-tenth to three-tenths the size of an opening portion of said trench;
(d) removing said sacrificial oxide film;
(e) forming an isolation oxide film in said trench after said step (c); and
(f) filling said trench with a burying material.
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Specification