Method for manufacturing a semiconductor device

• US 20030203606A1
• Filed: 10/18/2002
• Published: 10/30/2003
• Est. Priority Date: 04/26/2002
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Maekawa, Kazuyoshi
• Granted Patent: US 6,864,183 B2
• Time in Patent Office: Days
• US Class Current: 438/592
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 29/665 using self aligned silicidation, i.e. salicide formation of conductive layers comprising silicides H01L21/28518

Abstract

Plasma etching is performed using a mixed gas of at least one or more fluorine-containing gases selected from the group consisting of a nitrogen trifluoride gas, a hydrogen fluoride gas, a dicarbon hexafluoride gas, a carbon tetrafluoride gas and a sulfur hexafluoride gas, and an argon gas to remove a native oxide film 5 being on a silicon substrate 1 and a gate electrode 3, followed by forming a metal silicide film on the silicon substrate 1 and the gate electrode 3.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode, made of polysilicon, on a silicon substrate through a gate insulating film;

forming a sidewall, made of an insulating film, on side of said gate electrode;

removing a native oxide film being on the surfaces of said silicon substrate and said gate electrode by plasma etching with use of a mixed gas of at least one or more fluorine gases selected from the group consisting of a nitrogen trifluoride gas, a hydrogen fluoride gas, a dicarbon hexafluoride gas, a carbon tetrafluoride gas and a sulfur hexafluoride gas, and an argon gas; and

forming a metal silicide film on said silicon substrate and said gate electrode.

2. A method for manufacturing a semiconductor device according to claim 1, wherein said fluorine gases are contained at a concentration of not less than 0.5 vol % relative to said argon gas.

3. A method for manufacturing a semiconductor device according to any one of claim 1, wherein said metal silicide consists of a silicide of at least one metal selected from the group consisting of cobalt, titanium, nickel, tungsten, molybdenum, chromium and platinum.

4. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode, made of polysilicon, on a silicon substrate through a gate insulating film;

forming a sidewall, made of an insulating film, on side of said gate electrode;

removing native oxide films formed on the surfaces of said silicon substrate and said gate electrode by plasma etching with use of an argon gas; and

etching said sidewall with an aqueous hydrofluoric acid solution or an aqueous buffered hydrofluoric acid solution for lift-off to remove a residue of the plasma etching deposited on said sidewall; and

forming a metal silicide film on said silicon substrate and said gate electrode.

5. A method for manufacturing a semiconductor device, comprising the steps of:

forming an insulating film on a silicon substrate;

forming, in said insulating film, contact holes for exposing said silicon substrate therethrough;

removing a native oxide film formed on a silicon substrate surface exposed from said contact holes by plasma etching with use of a mixed gas of at least one or more fluorine gases selected from the group consisting of a nitrogen trifluoride gas, a hydrogen fluoride gas, a dicarbon hexafluoride gas, a carbon tetrafluoride gas and a sulfur hexafluoride gas, and an argon gas; and

forming a metal silicide film on said silicon substrate from which said native oxide film has been removed.