Atomic layer deposition of tungsten barrier layers using tungsten carbonyls and boranes for copper metallization
First Claim
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1. A method of copper metallization, comprising:
- depositing a tungsten layer on a semiconductor substrate using a cyclical deposition process; and
depositing copper on the tungsten layer.
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Abstract
A method of tungsten layer deposition for copper metallization in semiconductor devices includes reacting a tungsten carbonyl compound and a borane compound using a cyclical deposition technique. In one embodiment, the tungsten barrier layer is formed on a patterned dielectric layer by alternately adsorbing the tungsten carbonyl compound and the borane compound onto a semiconductor substrate. The tungsten layers have substantially uniform dimensions and excellent adhesion to copper such as copper seed layers or direct electroplating of copper onto the tungsten layer.
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Citations
32 Claims
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1. A method of copper metallization, comprising:
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depositing a tungsten layer on a semiconductor substrate using a cyclical deposition process; and
depositing copper on the tungsten layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of copper metallization, comprising:
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depositing a tungsten layer on a patterned dielectric layer by alternately adsorbing monolayers of tungsten hexacarbonyl and diborane; and
depositing copper on the tungsten layer. - View Dependent Claims (16, 17, 18)
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19. A method of copper metallization, comprising:
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depositing a tungsten layer on a semiconductor substrate by alternately adsorbing a monolayer of tungsten hexacarbonyl, purging excess tungsten hexacarbonyl, absorbing a monolayer of excess diborane, and purging excess diborane; and
electroplating copper on the tungsten barrier layer. - View Dependent Claims (20)
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21. A semiconductor device having a copper metallization structure, comprising:
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a tungsten layer deposited on a patterned dielectric layer by alternately adsorbing monolayers of tungsten hexacarbonyl and diborane; and
a copper layer deposited on the tungsten layer. - View Dependent Claims (22, 23, 24)
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- 25. A method for depositing tungsten on a substrate, comprising a plurality of cycles, wherein each cycle comprises establishing a flow of a purge gas to the process chamber and modulating the flow of the purge gas with alternating periods of exposure to a tungsten carbonyl compound and a borane compound.
Specification