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Atomic layer deposition of tungsten barrier layers using tungsten carbonyls and boranes for copper metallization

  • US 20030203616A1
  • Filed: 04/24/2002
  • Published: 10/30/2003
  • Est. Priority Date: 04/24/2002
  • Status: Abandoned Application
First Claim
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1. A method of copper metallization, comprising:

  • depositing a tungsten layer on a semiconductor substrate using a cyclical deposition process; and

    depositing copper on the tungsten layer.

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