Plasma etching apparatus

• US 20030203640A1
• Filed: 05/20/2003
• Published: 10/30/2003
• Est. Priority Date: 03/16/1995
• Status: Abandoned Application

• Current Assignee: Kazue Takahashi, Mitsuru Suehiro, Saburo Kanai, Tetsunori Kaji, Toshio Masuda
• Original Assignee: Kazue Takahashi, Mitsuru Suehiro, Saburo Kanai, Tetsunori Kaji, Toshio Masuda
• Inventors: Suehiro, Mitsuru, Takahashi, Kazue, Masuda, Toshio, Kanai, Saburo, Kaji, Tetsunori
• Application Number:
  US10/441,009
• Publication Number:
  US 20030203640A1
• Time in Patent Office: Days
• US Class Current: 438/709
• CPC Class Codes: H01J 2237/022 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
• CPC Class Codes: H01J 37/32504 Means for preventing sputtering of the vessel
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/6831 using electrostatic chucks

Abstract

A plasma etching apparatus for processing a sample placed within a processing chamber having a sidewall member which is electrically grounded to earth and constitutes at least a portion of the processing chamber and a removable member which constitutes an inner wall surface of the processing chamber. The removable member is thermally conductive and is held on the sidewall member and movable therefrom for removal from the processing chamber. The sample is processed in the processing chamber while controlling a temperature of the removable member.

Claims

1. A plasma etching apparatus for processing a sample placed within a processing chamber comprising:

a sidewall member which is electrically grounded to earth and constitutes at least a portion of the processing chamber; and

a removable member which constitutes an inner wall surface of the processing chamber, the removable member being thermally conductive and being held on the sidewall member and movable therefrom for removal from the processing chamber;

wherein the sample is processed in the processing chamber while controlling a temperature of the removable member.

2. A plasma processing chamber as defined in claim 1, wherein a controller controls the temperature of the removable member.

3. A plasma etching apparatus as defined in claim 1, wherein the controller controls the temperature of the removable member to be lower than a temperature of the sample.

4. A plasma etching apparatus as defined in claim 1, wherein a film is formed on a surface of the removable member constituting the inner wall surface of the processing chamber.

5. A plasma etching apparatus as defined in claim 4, wherein the thickness of the film formed on the surface of the removable member is 200 μ

m at a maximum.

6. A plasma etching apparatus as defined in claim 2, wherein the controller controls the temperature of the removable member in a range of 0°

C.-50°

C. while the sample is processed.

7. A plasma etching apparatus as defined in claim 3, wherein the controller controls the temperature of the removable member in a range of 0°

-50°

C. while the sample is processed.

8. A plasma etching apparatus as defined in claim 1, wherein a controller controls the temperature of the removable member by circulating a heat exchanging fluid through an interior of the removable member.

9. A plasma etching apparatus for processing a sample placed within a processing chamber comprising:

a sidewall member which is electrically grounded to earth and constitutes at least a portion of the processing chamber; and

a removable member which constitutes an inner wall surface of the processing chamber, the removable member being thermally conductive and adapted to be held on the sidewall member and movable therefrom as the inner wall surface of the processing chamber which his removable from the processing chamber;

wherein the sample is processed in the processing chamber while controlling a temperature of the removable member.

10. A plasma processing chamber as defined in claim 9, wherein a controller controls the temperature of the removable member.

11. A plasma etching apparatus as defined in claim 10, wherein the controller controls the temperature of the removable member to be lower than a temperature of the sample.

12. A plasma etching apparatus as defined in claim 9, wherein a film is formed on a surface of the removable member constituting the inner wall surface of the processing chamber.

13. A plasma etching apparatus as defined in claim 12, wherein the thickness of the film formed on the surface of the removable member is 200 μ

m at a maximum.

14. A plasma etching apparatus as defined in claim 10, wherein the controller controls the temperature of the removable member in a range of 0°

C.-50°

C. while the sample is processed.

15. A plasma etching apparatus as defined in claim 11, wherein the controller controls the temperature of the removable member in a range of 0°

-50°

C. while the sample is processed.

16. A plasma etching apparatus as defined in claim 9, wherein a controller controls the temperature of the removable member by circulating a heat exchanging fluid through an interior of the removable member.