Method of forming interlayer insulating film

• US 20030203655A1
• Filed: 03/28/2003
• Published: 10/30/2003
• Est. Priority Date: 08/29/1996
• Status: Active Grant

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Sugahara, Gaku, Aoi, Nobuo, Arai, Koji, Sawada, Kazuyuki
• Granted Patent: US 7,060,323 B2
• Time in Patent Office: Days
• US Class Current: 438/789
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: H01L 21/0212 the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02131 the material being halogen doped silicon oxides, e.g. FSG
• CPC Class Codes: H01L 21/02205 the layer being characterised by the precursor material for deposition
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02214 the compound comprising silicon and oxygen
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31051 Planarisation of the insulating layers H01L21/31058 takes precedence
• CPC Class Codes: H01L 21/31058 of organic layers
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/3127 Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
• CPC Class Codes: H01L 21/314 Inorganic layers H01L21/3105, H01L21/32 take precedence
• CPC Class Codes: H01L 21/31608 Deposition of SiO2 H01L21/31625, H01L21/31629 and H01L21/31633 take precedence
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/31629 Deposition of halogen doped silicon oxide, e.g. fluorine doped silicon oxide
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/76801 : characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/76807 : for dual damascene structures

Abstract

A material containing, as a main component, an organic silicon compound represented by the following general formula:

R¹_xSi(OR²)_4−x

(where R¹ is a phenyl group or a vinyl group; R² is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing an organic component. As the organic silicon compound where R¹ is a phenyl group, there can be listed phenyltrimethoxysilane or diphenyldimethoxysilane. As the organic silicon compound where R¹ is a vinyl group, there can be listed vinyltrimethoxysilane or divinyldimethoxysilane.

Claims

1. A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula:

R¹_xSi(OR²)<sub>4−

x</sub>

(where R¹ is a phenyl group or a vinyl group;

R² is an alkyl group; and

x is an integer of 1 to

     3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing an organic component.

2. A method of forming an interlayer insulating film according to claim 1, wherein said organic silicon compound is phenyltrimethoxysilane or diphenyldimethoxysilane.

3. A method of forming an interlayer insulating film according to claim 1, wherein said organic silicon compound is vinyltrimethoxysilane or divinyldimethoxysilane.

4. A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula:

R¹_xSiH<sub>4−

x</sub>

(where R¹ is a phenyl group or a vinyl group; and

x is an integer of 1 to

     3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing an organic component.

5. A method of forming an interlayer insulating film according to claim 4, wherein said organic silicon compound is phenylsilane or diphenylsilane.

6. A method of forming an interlayer insulating film according to claim 4, wherein said organic silicon compound is vinylsilane or divinylsilane.

7. A method of forming an interlayer insulating film, wherein a material containing, as a main component, a fluorinated carbon compound having two or more double bonds of carbon atoms in a molecule thereof is caused to undergo plasma polymerization to form an interlayer insulating film composed of a fluorinated amorphous carbon film.

8. A method of forming an interlayer insulating film according to claim 7, wherein said fluorinated carbon compound is composed only of carbon atoms and fluorine atoms.

9. A method of forming an interlayer insulating film according to claim 8, wherein said fluorinated carbon compound is hexafluoro-1,3-butadiene.

10. A method of forming an interlayer insulating film, wherein a material containing, as a main component, a fluorinated carbon compound having a triple bond of carbon atoms in a molecule thereof is caused to undergo plasma polymerization to form an interlayer insulating film composed of a fluorinated amorphous carbon film.

11. A method of forming an interlayer insulating film according to claim 10, wherein said fluorinated carbon compound is composed only of carbon atoms and fluorine atoms.

12. A method of forming an interlayer insulating film according to claim 11, wherein said fluorinated carbon compound is hexafluoro-2-butyne.

13. A method of forming an interlayer insulating film, wherein a material containing, as a main component, a fluorinated carbon compound having a polycyclic structure in a molecule thereof is caused to undergo plasma polymerization to form an interlayer insulating film composed of a fluorinated amorphous carbon film.

14. A method of forming an interlayer insulating film according to claim 13, wherein said fluorinated carbon compound is composed only of carbon atoms and fluorine atoms.

15. A method of forming an interlayer insulating film according to claim 13, wherein said fluorinated carbon compound has a condensed cyclic structure in the molecule thereof.

16. A method of forming an interlayer insulating film according to claim 15, wherein said fluorinated carbon compound is perfluorodecalin, perfluorofluorene, or perfluoro(tetradecahydrophenanthrene).

17. A method of forming an interlayer insulating film, wherein a material containing, as a main component, a gas mixture of an organic silicon compound composed of a compound represented by the following general formula:

R¹_xSi(OR²)<sub>4−

x</sub>

(where R¹ is a phenyl group or a vinyl group;

R² is an alkyl group; and

x is an integer of 1 to

     3) or of a siloxane derivative and a fluorinated carbon compound is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing a fluorinated carbon.

18. A method of forming an interlayer insulating film, wherein a material containing, as a main component, a gas mixture of an organic silicon compound and a fluorinated carbon compound having two or more double bonds of carbon atoms in a molecule thereof is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing a fluorinated carbon.

19. A method of forming an interlayer insulating film according to claim 18, wherein said organic silicon compound is composed of a compound represented by the following general formula:

R¹_xSi(OR²)<sub>4−

x</sub>

(where R¹ is a phenyl group or a vinyl group;

R² is an alkyl group; and

x is an integer of 1 to

     3) or of a siloxane derivative.

20. A method of forming an interlayer insulating film, wherein a material containing, as a main component, a gas mixture of an organic silicon compound and a fluorinated carbon compound having a triple bond of carbon atoms in a molecule thereof is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing a fluorinated carbon.

21. A method of forming an interlayer insulating film according to claim 20, wherein said organic silicon compound is composed of a compound represented by the following general formula:

R¹_xSi(OR²)<sub>4−

x</sub>

(where R¹ is a phenyl group or a vinyl group;

R² is an alkyl group; and

x is an integer of 1 to

     3) or of a siloxane derivative.

22. A method of forming an interlayer insulating film, wherein a material containing, as a main component a gas mixture of an organic silicon compound and a fluorinated carbon compound having a polycyclic structure is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing a fluorinated carbon.

23. A method of forming an interlayer insulating film according to claim 22, wherein said organic silicon compound is composed a compound represented by the following general formula:

R¹_xSi(OR²)<sub>4−

x</sub>

(where R¹ is a phenyl group or a vinyl group;

R² is an alkyl group; and

x is an integer of 1 to

     3) or of a siloxane derivative.