Connection terminals and manufacturing method of the same, semiconductor device and manufacturing method of the same

• US 20030203661A1
• Filed: 04/25/2003
• Published: 10/30/2003
• Est. Priority Date: 04/26/2002
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Ono, Atsushi, Yamaguchi, Shinji, Asazu, Takuro
• Granted Patent: US 6,908,311 B2
• Time in Patent Office: Days
• US Class Current: 439/65
• CPC Class Codes: H01L 2224/05557 comprising protrusions or indentations
• CPC Class Codes: H01L 2224/05567 the external layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/13018 comprising protrusions or indentations
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13164 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/13611 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 2924/0001 Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A first protection film (3) and a second protection film (4) are formed on an electrode pad (2). Bumps (5) are formed at sites where the deposited first and second protection films (3), (4) are both removed. The openings (3a) where the lower, first protection film (3) is removed are larger than the openings (4a) where the upper, second protection film (4) is removed, so that the upper, second protection film (4) has an overhanging structure. The bottom periphery of the bump (5) is formed to extend under the second protection film (4).

Claims

1. A connection terminal, comprising:

an electrode pad having layered protection films formed on a surface thereof; and

a projecting electrode formed in an opening in the protection films on the electrode pad,

wherein;

a lower protection film has a larger opening therein than does an upper protection film; and

the projecting electrode has a bottom extending under the upper protection film.

2. The connection terminal of claim 1, wherein

the projecting electrode is made of either an element selected from the group consisting of nickel, copper, palladium, gold, and tin or a compound containing one of the elements.

3. The connection terminal of claim 1, wherein

the projecting electrode has a surface made of gold, palladium, or tin.

4. The connection terminal of claim 1, wherein

the upper protection film is made of a silicon nitride film, and the lower protection film is made of a silicon oxide film.

5. The connection terminal of claim 1, wherein

the opening in the lower protection film is of a size equal to, or smaller than, the electrode pad.

6. The connection terminal of claim 1, wherein

the opening in the lower protection film has such a width that the projecting electrode exhibits an adhesion strength of more than 0.1 N.

7. The connection terminal of claim 1, comprising a plurality of said projecting electrode,

the opening in the upper protection film has such a width that the projecting electrode is separated from adjacent projecting electrodes by a distance of 5 μ

m or greater.

8. A connection terminal, comprising:

an electrode pad having layered protection films formed on a surface thereof; and

a projecting electrode formed in an opening in the protection films on the electrode pad,

wherein;

an upper protection film and a lower protection film have such an opening that the upper protection film overhangs the lower protection film; and

the projecting electrode sandwiches an overhanging part of the upper protection film.

9. A method of manufacturing a connection terminal including:

an electrode pad having layered protection films formed on a surface thereof; and

a projecting electrode formed in an opening in the protection films on the electrode pad, wherein;

a lower protection film has a larger opening therein than does an upper protection film; and

the projecting electrode has a bottom extending under the upper protection film, the method comprising the steps of;

dry etching the upper protection film to form an opening therein;

wet etching the lower protection film to form an opening therein; and

performing electroless plating to form the projecting electrode.

10. A method of manufacturing a connection terminal, comprising the steps of:

forming protection films on a surface of an electrode pad;

forming an opening in an upper protection film and a lower protection film so that the upper protection film overhangs the lower protection film; and

performing electroless plating to form a projecting electrode in the opening.

11. A semiconductor device, comprising

a connection terminal comprising:

an electrode pad having layered protection films formed on a surface thereof; and

a projecting electrode formed in an opening in the protection films on the electrode pad,

wherein;

a lower protection film has a larger opening therein than does an upper protection film; and

the projecting electrode has a bottom extending under the upper protection film.

12. A method of manufacturing a semiconductor device including a connection terminal including:

an electrode pad having layered protection films formed on a surface thereof; and

a projecting electrode formed in an opening in the protection films on the electrode pad, wherein;

a lower protection film has a larger opening therein than does an upper protection film; and

the projecting electrode has a bottom extending under the upper protection film, the method comprising the steps of;

dry etching the upper protection film to form an opening therein;

wet etching the lower protection film to form an opening therein; and

performing electroless plating to form the projecting electrode.

13. A method of manufacturing a semiconductor device, comprising the step of forming a connection terminal, said step comprising the substeps of:

forming protection films on a surface of an electrode pad;

forming an opening in an upper protection film and a lower protection film so that the upper protection film overhangs the lower protection film; and

performing electroless plating to form a projecting electrode in the opening.