Nitride semiconductor device

• US 20030205736A1
• Filed: 05/22/2003
• Published: 11/06/2003
• Est. Priority Date: 07/07/2000
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Kozaki, Tokuya
• Granted Patent: US 6,838,693 B2
• Time in Patent Office: Days
• US Class Current: 257/200
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01S 2304/12 Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/2009 by using electron barrier layers
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/305 characterised by the doping materials used in the laser structure
• CPC Class Codes: H01S 5/3054 p-doping
• CPC Class Codes: H01S 5/3086 doping of the active layer
• CPC Class Codes: H01S 5/3407 characterised by special barrier layers
• CPC Class Codes: H01S 5/3415 containing details related to carrier capture times into wells or barriers
• CPC Class Codes: H01S 5/343 in AIIIBV compounds, e.g. AlGaAs-laser , InP-based laser
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.

Claims