High voltage row and column driver for programmable resistance memory
First Claim
Patent Images
1. A memory system, comprising:
- a programmable resistance memory cell coupled to a column line and a row line; and
a driver circuit having an output node for outputting an output voltage to the column line and/or the row line, the driver circuit comprising;
a plurality of PMOS transistors coupled in series between said output node and a first node of said driver circuit, a plurality of NMOS transistors coupled is series between said output node and a second node of said driver circuit.
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Abstract
A driver circuit having one or more MOS transistors. The driver circuit is capable of providing an output voltage greater than the power supply voltage; however, the magnitude of the voltages appearing across the terminals of the MOS transistors are preferably less than or equal to the magnitude of the power supply voltage. The driver circuit may comprise a plurality of serially coupled PMOS transistors and a plurality of serially coupled NMOS transistors wherein the plurality of PMOS transistors and plurality of NMOS transistors are coupled at the output node of the driver.
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Citations
57 Claims
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1. A memory system, comprising:
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a programmable resistance memory cell coupled to a column line and a row line; and
a driver circuit having an output node for outputting an output voltage to the column line and/or the row line, the driver circuit comprising;
a plurality of PMOS transistors coupled in series between said output node and a first node of said driver circuit, a plurality of NMOS transistors coupled is series between said output node and a second node of said driver circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A memory system, comprising:
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a programmable resistance memory cell coupled to a column line and a row line; and
a driver circuit having an output node for outputting an output voltage to the column line and/or the row line, the driver circuit comprising;
a plurality of PMOS transistors coupled in series, a plurality of NMOS transistors coupled is series, said plurality of PMOS transistors being coupled in series with said plurality of NMOS at said output node. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
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39. A memory system, comprising:
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a programmable resistance memory cell coupled to a column line and a row line; and
a driver circuit having at least one MOS transistor, said driver circuit outputting an output voltage from an output node to the column line and/or the row line, the driver circuit having a first node supplied with a first voltage and a second node supplied with a second voltage, the magnitude of said first voltage being greater than the magnitude of said second voltage, said driver circuit adapted so that said output voltage is capable of having a magnitude greater than the magnitude of said second voltage, said driver circuit further adapted so that voltages across a drain and a source of said MOS transistor, a gate and the drain of said MOS transistor, and the gate and the source of said MOS transistors have magnitudes that are less than or equal to the magnitude of said second voltage. - View Dependent Claims (40, 41, 42, 43, 44, 45, 46, 47, 48)
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49. A driver circuit, comprising:
at least one MOS transistor, said driver circuit outputting an output voltage from an output node, the driver circuit having a first node supplied with a first voltage and a second node supplied with a second voltage, the magnitude of said first voltage being greater than the magnitude of said second voltage, said driver circuit adapted so that said output voltage is capable of having a magnitude greater than the magnitude of said second voltage, said driver circuit further adapted so that voltages across a drain and a source of said MOS transistor, a gate and the drain of said MOS transistor, and the gate and the source of said MOS transistors have magnitudes that are less than or equal to the magnitude of said second voltage. - View Dependent Claims (50, 51, 52, 53, 54, 55, 56, 57)
Specification