Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same

• US 20030207146A1
• Filed: 06/04/2003
• Published: 11/06/2003
• Est. Priority Date: 02/05/1996
• Status: Active Grant

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: Sasame, Akira, Kobayashi, Mitsunori, Sasaki, Kazutaka, Nakata, Hirohiko
• Granted Patent: US 6,783,867 B2
• Time in Patent Office: Days
• US Class Current: 428/627
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/8547 Zirconium (Zr) as principal constituent
• CPC Class Codes: H01L 23/498 Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers shape of the substrate H01L23/13
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/15747 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/207 Diameter ranges
• CPC Class Codes: H05K 3/38 Improvement of the adhesion between the insulating substrate and the metal
• CPC Class Codes: Y10T 428/12528 Semiconductor component
• CPC Class Codes: Y10T 428/12576 Boride, carbide or nitride component
• CPC Class Codes: Y10T 428/12806 Refractory [Group IVB, VB, or VIB] metal-base component
• CPC Class Codes: Y10T 428/12812 Diverse refractory group metal-base components: alternative to or next to each other
• CPC Class Codes: Y10T 428/1291 : Next to Co-, Cu-, or Ni-base component
• CPC Class Codes: Y10T 428/24917 : including metal layer

Abstract

A highly reliable member for a semiconductor device, in which a high melting point metallizing layer, which consists mainly of a high melting point metal such as W and/or Mo, and an intervening metal layer, which has a melting point of not greater than 1,000° C. and consists mainly of at least one selected from among Ni, Cu and Fe, are provided on an AlN substrate material in this order on the AlN substrate material, and a conductor layer consisting mainly of copper is directly bonded to the intervening metal layer without intervention of a solder material layer. A semiconductor element or the like is mounted on the member for a semiconductor device, thereby fabricating a semiconductor device. The high melting point metallizing layer is formed on an aluminum nitride substrate by post-fire or co-fire matallization.

Claims

1. A member for a semiconductor device in which a high melting point metallizing layer consisting essentially of not less than 80 volume % of at least one high melting point metal selected from the group consisting of W, Mo, Ta, Ti and Zr and not greater than 20 volume % of glass frit, and an intervening metal layer which has a melting point of not greater than 1,000°

C. and consists essentially of at least one member selected from the group consisting of nickel, copper and iron or a member selected from the group consisting of nickel-phosphorous, nickel-boron, copper-zinc and copper-phosphorous ore formed in this order on an aluminum nitride substrate material, and a conductor layer consisting essentially of copper is directly bonded as a circuit layer to said intervening metal layer, without forming an intervening solder layer.

2. A member for a semiconductor device according to claim 1, in which the planar length and width of said conductor layer are shorter than those of said high melting point metallizing layer and said intervening metal layer by nut less than 0.05 mm.

3. A member for a semiconductor device, according to claim 1, in which, in the end shape of said conductor layer, the angle formed by a bonding interface between said conductor layer and said intervening metal layer and a side face of said conductor layer is not greater than 80°

, whereas the angle formed by the upper surface and the side face of said conductor layer is not less than 80°

.

4. A member for a semiconductor device according to claim 1, in which said high melting point metallizing layer is 3-50 μ

m in thickness.

5. A member for a semiconductor device according to claim 1, in which said intervening metal layer is 2-40 μ

m in thickness.

6. A member for a semiconductor device according to claim 1, in which said intervening metal layer is made of nickel-phosphorus.

7. A member for a semiconductor device according to claim 1, in which said intervening metal layer includes two layers, a nickel-boron layer and a nickel-phosphorus layer, formed in this order on said substrate material.

10. A semiconductor device in which a semiconductor element is die-bonded to the member for a semiconductor device set forth in claim 1.

8. A method of manufacturing a member for a semiconductor device, in which a conductor layer consisting essentially of copper is bonded to an aluminum nitride substrate material, the method comprising the steps of:

coating a sintered aluminum nitride substrate material with a paste comprising at least one high melting point metal selected from the group consisting of W, Mo, Ta, Ti and Zr and a glass frit, and firing said paste to form a high melting point metallizing layer consisting essentially of not less than 80 volume % of the high melting point metal and not greater than 20 volume % of the glass frit;

forming an intervening metal layer which has a melting point of not greater than 1,000°

C. and consists of at least one selected from the group consisting of Ni, Cu and Fe or a member selected from the group consisting of nickel-phosphorous, nickel-boron, copper-zinc and copper-phosphorous, on either or both of said high melting point metallizing layer and a conductor layer consisting essentially of copper; and

bonding said aluminum nitride substrate material to said conductor layer consisting essentially of copper as a circuit layer via said intervening metal layer at a temperature of less than the melting point of said conductor layer, without forming an intervening solder layer.

9. A method of manufacturing a member for a semiconductor device, in which a conductor layer consisting essentially of copper is bonded to an aluminum nitride substrate material, the method comprising the steps of:

coating a compact comprising an aluminum nitride material powder with a paste comprising at least one high melting point metal selected from the group consisting of W, Mo, Ta, Ti and Zr and a glass grit, and then firing the body to obtain an aluminum nitride substrate material and, at the same time, form a high melting point metallizing layer consisting essentially of not less than 80 volume % of the high melting point metal and not greater than 20 volume % or the glass frit;

forming an intervening metal layer which has a melting point of not greater than 1,000°

C. and consists essentially of one selected from the group consisting of Ni, Cu and Fe, or a member selected from the group consisting of nickel-phosphorous, nickel-boron, copper-zinc and copper-phosphorous, on either or both of said high melting point metallizing layer and a conductor layer consisting essentially of copper; and

bonding said aluminum nitride substrate material to said conductor layer consisting essentially of copper as a circuit layer via said intervening metal layer at a temperature of less than the melting point of said conductor layer, without farming an intervening solder layer.