Semiconductor component with an increased breakdown voltage in the edge area
First Claim
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1. A semiconductor component, comprising:
- a semiconductor body having a front face, a rear face, and trenches formed therein, said trenches disposed at a distance from one another in a horizontal direction of said semiconductor body and extend in a vertical direction of said semiconductor body; and
a cell array formed in said semiconductor body and having an edge area, a number of identically formed transistor cells, and at least one edge cell formed at said edge area of said cell array, each of said transistor cells having;
a first connection zone of a first conductivity type disposed in an area of said rear face of said semiconductor body;
a second connection zone of said first conductivity type disposed in an area of said front face of said semiconductor body;
a channel zone of a second conductivity type disposed between said first connection zone and said second connection zone;
at least one control electrode disposed in a respective one of said trenches extending in the vertical direction into said semiconductor body; and
a first insulation layer insulating said control electrode from said semiconductor body;
said edge cell including;
a field plate disposed in another one of said trenches being an edge trench extending in the vertical direction into said semiconductor body; and
a second insulation layer insulating said field plate from said semiconductor body, a first distance between said edge trench of said edge cell and said respective trench of an immediately adjacent one of said transistor cells being less than a second distance between said respective trench of said immediately adjacent one of said transistor cells and a further respective trench of a further immediately adjacent one of said transistor cells in said cell array.
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Abstract
A semiconductor component has a cell array formed in a semiconductor body with a number of identical transistor cells and at least one edge cell formed at an edge of the cell array. Each of the transistor cells has a control electrode, which is formed in a trench, and the edge cell has a field plate, which is formed in a trench, with a distance between the trench of the edge cell and the trench of the immediately adjacent transistor cell being less than the distance between a trench of a transistor cell and the trench of an immediately adjacent transistor cell in the cell array.
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Citations
10 Claims
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1. A semiconductor component, comprising:
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a semiconductor body having a front face, a rear face, and trenches formed therein, said trenches disposed at a distance from one another in a horizontal direction of said semiconductor body and extend in a vertical direction of said semiconductor body; and
a cell array formed in said semiconductor body and having an edge area, a number of identically formed transistor cells, and at least one edge cell formed at said edge area of said cell array, each of said transistor cells having;
a first connection zone of a first conductivity type disposed in an area of said rear face of said semiconductor body;
a second connection zone of said first conductivity type disposed in an area of said front face of said semiconductor body;
a channel zone of a second conductivity type disposed between said first connection zone and said second connection zone;
at least one control electrode disposed in a respective one of said trenches extending in the vertical direction into said semiconductor body; and
a first insulation layer insulating said control electrode from said semiconductor body;
said edge cell including;
a field plate disposed in another one of said trenches being an edge trench extending in the vertical direction into said semiconductor body; and
a second insulation layer insulating said field plate from said semiconductor body, a first distance between said edge trench of said edge cell and said respective trench of an immediately adjacent one of said transistor cells being less than a second distance between said respective trench of said immediately adjacent one of said transistor cells and a further respective trench of a further immediately adjacent one of said transistor cells in said cell array. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor component, comprising:
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a semiconductor body having a front face, a rear face, and trenches formed therein extending in a vertical direction in said semiconductor body;
a cell array formed in said semiconductor body and having a number of identically formed transistor cells, each of said transistor cells including;
a first connection zone of a first conductivity type disposed in an area of said rear face of said semiconductor body;
a second connection zone of said first conductivity type disposed in an area of said front face of said semiconductor body;
a channel zone of a second conductivity type disposed between said first connection zone and said second connection zone;
a control electrode disposed in one of said trenches; and
an insulation layer insulating said control electrode from said semiconductor body, said trenches of said transistor cells disposed at a distance from one another in a horizontal direction of said semiconductor body;
a first distance between at least two of said trenches in said cell array on a side facing away from respectively associated cell is less than a second distance between said trenches of two immediately adjacent ones of said transistor cells in said cell array; and
a component having connections disposed in an area of said front face of said semiconductor body between said two trenches being closer together. - View Dependent Claims (10)
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Specification