Compositions and devices made by synthesis of layers, coatings or films using electrostatic fields

• US 20030211646A1
• Filed: 04/22/2003
• Published: 11/13/2003
• Est. Priority Date: 09/20/2001
• Status: Abandoned Application

• Current Assignee: HelioVolt Corporation
• Original Assignee: HelioVolt Corporation
• Inventors: Stanbery, Billy J.
• Application Number:
  US10/420,087
• Publication Number:
  US 20030211646A1
• Time in Patent Office: Days
• US Class Current: 438/46
• CPC Class Codes: H01L 31/0322 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells

Abstract

Systems and methods are described for synthesis of films, coatings or layers using electrostatic fields. A method includes applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.

Claims

1. A method, comprising:

applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer; and

moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.

2. The method of claim 1, where the first precursor layer includes a first chemical reactant, the second precursor layer includes a second chemical reactant, and the composition layer includes a chemical product yielded by a chemical reaction between the first chemical reactant and the second chemical reactant.

3. The method of claim 1, wherein the first chemical reactant includes a first multinary compound and the second chemical reactant includes a second multinary compound.

4. The method of claim 1, wherein the electrostatic field is sufficient change the transport rate of at least one ionic species.

5. The method of claim 1, further comprising reversing the electrostatic field.

6. The method of claim 1, wherein the electrostatic field is applied with an alternating current circuit.

7. The method of claim 1, wherein the electrostatic field modifies a reaction trajectory.

8. The method of claim 1, wherein the electrostatic filed is sufficient to generate a pressure between the first precursor and the second precursor layer.

9. The method of claim 8 wherein the pressure is sufficient to substantially prevent escape of vapor from at least one of the first precursor layer, the second precursor layer and the composition layer.

10. The method of claim 1, further comprising heating the first precursor layer.

11. The method of claim 1, wherein at least a portion of the second precursor layer melts and substantially no portion of the first precursor layer melts.

12. The method of claim 1, wherein the first substrate includes a tool.

13. The method of claim 12, wherein a release layer is located between the tool and the first precursor layer.

14. The method of claim 13, wherein the release layer includes at least one fluoride selected from the group consisting of CaF₂ and SrF₂.

15. The method of claim 12, further comprising coupling another precursor layer to the tool after moving.

16. The method of claim 1, wherein an electrode layer is located between the second precursor layer and the second substrate.

17. The method of claim 16, wherein the electrode layer includes at least one metal selected from the group consisting of Mo and Ti.

18. The method of claim 1, wherein the composition layer includes copper, indium and selenium.

19. The method of claim 18, further comprising controlling the temperature of the second precursor layer within a range of from approximately 520°

C. to approximately 635°

C.

20. The method of claim 18, wherein the first precursor layer includes (In,Ga)_y(S,Se)_1-y and the second precursor layer includes Cu_xSe_1-x.

21. The method of claim 1, wherein a template is located between the first precursor layer and the first substrate.

22. The method of claim 1, wherein a template is located between the second precursor layer and the second substrate.

23. The method of claim 1, wherein a surfactant is located between the first precursor layer and the first substrate.

24. The method of claim 1, wherein a surfactant is located between the first precursor and the second precursor.

25. The method of claim 1, wherein an adhesion layer is located between the first precursor layer and the first substrate.

26. The method of claim 1, wherein an adhesion layer is located between the second precursor layer and the second substrate.

27. The method of claim 1, wherein a diffusion barrier layer is located between the first precursor layer and the first substrate.

28. The method of claim 1, wherein a diffusion barrier layer is located between the second precursor layer and the second substrate.

29. The method of claim 1, wherein

the first precursor layer is coupled to the first substrate by a deposition method selected from the group consisting of physical vapor deposition and chemical vapor deposition;

and

the second precursor layer is coupled to the second substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, physical vapor deposition and chemical vapor deposition.

30. The method of claim 1, further comprising depositing a buffer layer on the composition layer.

31. The method of claim 30, further comprising deposition a window layer on the buffer layer.

32. A photovoltaic device made by the method of claim 1.

33. An electrical power generation system comprising the photovoltaic device of claim 32.

34. An electronic device made by the method of claim 1.

35. A photodiode made by the method of claim 1.

36. A composition prepared by a process comprising:

applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer;

and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.

37. A photovoltaic device comprising the composition of claim 36.

38. An electrical power generation system comprising the photovoltaic device of claim 37.

39. An electronic device comprising the composition of claim 36.

40. A photodiode comprising the composition of claim 36.

41. A process of preparing a film formed of multinary compounds, comprising:

applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer;

and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.

42. A photovoltaic device made by the process of claim 41.

43. An electrical power generation system comprising the photovoltaic device of claim 42.

44. An electronic device made by the process of claim 41.

45. A photodiode made by the process of claim 41.

46. A method, comprising:

applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;

forming a composition layer; and

modifying at least a part of the first substrate, wherein the composition layer remains coupled to the second substrate.

47. The method of claim 46, wherein modifying includes removing.

48. The method of claim 47, wherein removing includes etching.

49. The method of claim 47, wherein removing includes mechanical motion and a portion of the first substrate is not removed.