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Methods for critical dimension and focus mapping using critical dimension test marks

  • US 20030211700A1
  • Filed: 12/04/2002
  • Published: 11/13/2003
  • Est. Priority Date: 04/19/2002
  • Status: Active Grant
First Claim
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1. A method comprising:

  • repeatedly exposing a wafer with a lithography tool to form a plurality of test marks on the surface of the wafer;

    measuring a focus component of the test marks;

    mapping the wafer from the measured focus component of the test marks;

    characterizing the lithography tool based on the mapped wafer; and

    adjusting the lithography tool to improve focusing based on the characterization.

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