Atmospheric pressure plasma processing reactor

• US 20030213561A1
• Filed: 07/29/2002
• Published: 11/20/2003
• Est. Priority Date: 03/12/2001
• Status: Abandoned Application

• Current Assignee: Gary S. Selwyn, Hans Snyder, Hans W. Herrmann, Ivars Henins
• Original Assignee: Gary S. Selwyn, Hans Snyder, Hans W. Herrmann, Ivars Henins
• Inventors: Snyder, Hans, Selwyn, Gary S., Herrmann, Hans W., Henins, Ivars
• Application Number:
  US10/208,124
• Publication Number:
  US 20030213561A1
• Time in Patent Office: Days
• US Class Current: 156/345.43
• CPC Class Codes: G03F 7/427 using plasma means only
• CPC Class Codes: H01J 2237/3342 Resist stripping
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32825 Working under atmospheric pressure or higher
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H05H 1/24 Generating plasma nuclear fusion reactors G21B1/00; gas-filled discharge reactors H01J37/32
• CPC Class Codes: H05H 1/466 using capacitive coupling means, e.g. electrodes

Abstract

An atmospheric pressure plasma etching reactor, in one embodiment, has a table holding a wafer to be processed and which moves the wafer to be processed under at least one electrode that is mounted in close proximity to the table and defines an entry of a gas mixture, and in another embodiment, has interleaved radio frequency powered electrodes and grounded electrodes. Electrodes may have grooves having preselected widths to enhance the plasma for treatment of the wafers. With a radio-frequency voltage connected between the electrodes, and a gas mixture between the electrode and the wafer, a plasma is created between the electrode and the wafer to be processed, resulting in surface treatment, film removal or ashing of the wafer.

Claims

1. An atmospheric pressure plasma processing reactor comprising:

an electrically conductive table for holding and moving a wafer to be processed along a defined track;

at least one atmospheric pressure plasma processor, said at least one atmospheric pressure plasma processor having an electrically conductive electrode situated in close proximity to said electrically conductive table, and defining an entry for introduction of a gas mixture;

wherein with a radio-frequency voltage connected between said electrically conductive table and said electrically conductive electrode of said least one atmospheric pressure plasma processor and said gas mixture introduced into said at least one atmospheric pressure plasma processor, a plasma is created between said wafer to be processed and said electrically conductive electrode of said at least one atmospheric pressure plasma processor for processing said wafer to be processed during relative movement of the wafer and electrically conductive electrode.

2. The atmospheric pressure plasma etching reactor described in claim 1 further comprising grooves having preselected widths in at least one of said electrically conductive electrodes.

3. The atmospheric pressure plasma etching reactor described in claim 1 wherein said electrically conductive electrodes are flat.

4. The atmospheric pressure plasma etching reactor described in claim 1 further comprising temperature control channels in said least one atmospheric pressure plasma processor.

5. The atmospheric pressure plasma etching reactor described in claim 1 further comprising at least one of the following:

baffles, nozzles or a showerhead, for uniformly distributing said gas mixture throughout said least one atmospheric pressure plasma processor.

6. The atmospheric pressure plasma etching reactor described in claim 1 further comprising controllable heating elements in said electrically conductive table.

7. The atmospheric pressure plasma etching reactor described in claim 1 further comprising a motor for moving said at least one electrically conductive electrode.

8. The atmospheric pressure plasma etching reactor as described in claim 1 wherein said least one atmospheric pressure plasma processor consists of one atmospheric pressure plasma processor.

9. The atmospheric pressure plasma etching reactor as described in claim 1 wherein said at least one atmospheric pressure plasma processor comprises two atmospheric pressure plasma processors.

10. The atmospheric pressure plasma etching reactor as described in claim 1, wherein said gas mixture comprises helium and carbon tetrafluoride.

11. The atmospheric pressure plasma etching reactor as described in claim 1, wherein said gas mixture comprises helium and oxygen.

12. The atmospheric pressure plasma etching reactor as described in claim 1, wherein said gas mixture comprises helium and hydrogen.

13. The apparatus as described in claim 1 further comprising at least one of the following:

baffles, nozzles or a showerhead, in said radio frequency powered electrode for uniformly distributing said gas mixture throughout said least one atmospheric pressure plasma processor.

14. An atmospheric pressure plasma processing reactor comprising:

at least one wafer processor having grounded electrodes and radio frequency powered electrodes interleaved and defining a pair of electrodes with a volume defined between said electrode pairs;

wafer transport means for transporting wafers to be processed and placing each wafer between and onto ones of said grounded electrode or said radio frequency powered electrode of said pair electrodes;

gas introduction means for introducing a predetermined composition gas mixture between each of said electrode pairs;

wherein, with a radio frequency voltage connected between said electrode pairs and with the gas mixture in said volume between said electrode pairs, a plasma is created between said electrode pairs that is used for stripping or other means of wafer treatment accomplished by exposure to a chemically-reactive plasma.

15. The apparatus as described in claim 14 further comprising an enclosure surrounding said atmospheric pressure plasma processing reactor.

16. The apparatus as described in claim 14, wherein said wafer transport means includes a vacuum chuck for holding said wafers.

17. The apparatus as described in claim 14, wherein said electrodes further comprises grooves having preselected widths in each radio frequency powered electrode.

18. The apparatus as described in claim 14, wherein said radio frequency powered electrodes are flat.

19. The apparatus as described in claim 14, wherein said wafer transport means and said wafers become an electrical and physical part of said electrode pair during processing of said wafers.

20. The apparatus as described in claim 14 wherein said predetermined composition gas mixture is helium and oxygen.

21. The apparatus as described in claim 14 wherein said predetermined composition gas mixture is helium and carbon tetrafluoride.

22. The apparatus as described in claim 14 further comprising controllable heating elements in said electrode pair.

23. The apparatus as described in claim 14 further comprising at least one of the following:

baffles, nozzles or a showerhead, in said radio frequency powered electrode for uniformly distributing said gas mixture throughout said least one atmospheric pressure plasma processor.

24. An atmospheric pressure plasma processing reactor comprising:

two or more wafer processors each wafer processor having grounded electrodes and radio frequency powered electrodes interleaved so that a volume is defined between each of said grounded electrodes and said radio frequency powered electrodes;

a single enclosure enclosing said two or more wafer processors;

wafer transport means for transporting wafers to be processed from a first wafer processor to a second wafer processor inside said single enclosure and placing each wafer onto either said grounded electrodes or said radio frequency powered electrodes;

gas introduction means for introducing a predetermined composition gas mixture between each of said grounded electrodes and said radio frequency powered electrodes;

wherein, with a radio frequency voltage connected between said grounded electrode and said radio frequency powered electrode and with the gas mixture in said volume between said grounded electrode and said radio frequency electrode, a plasma is created between said grounded electrodes and said radio frequency powered electrodes for processing said wafers.

25. The apparatus as described in claim 24 wherein said wafer transport means includes a vacuum chuck for holding said wafers.

26. The apparatus as described in claim 24, wherein said wafer transport means and said wafers become an electrical and physical part of said grounded electrodes or said radio frequency electrodes during processing of said wafers.

27. The apparatus as described in claim 24 wherein said predetermined composition gas mixture is helium and oxygen.

28. The apparatus as described in claim 24 wherein said predetermined composition gas mixture is helium and carbon tetrafluoride.

29. The apparatus as described in claim 24 further comprising controllable heating elements in either said grounded electrodes or said radio frequency powered electrodes.

30. The apparatus as described in claim 24 further comprising one of the following:

baffles, nozzles or a showerhead, located in said radio frequency powered electrodes or in said grounded electrodes for uniformly distributing said gas mixture throughout said least one atmospheric pressure plasma processor.

31. The apparatus as described in claim 24 further comprising a series of grooves having preselected widths in at least one or more said grounded electrodes or radio frequency electrodes in said wafer processors.

32. The apparatus as described in claim 24 wherein said grounded electrodes and said radio frequency powered electrodes are flat.