III-V Nitride homoepitaxial material of improved MOVPE epitaxial quality (surface texture and defect density) formed on free-standing (Al,In,Ga)N substrates, and opto-electronic and electronic devices comprising same

  • US 20030213964A1
  • Filed: 12/06/2002
  • Published: 11/20/2003
  • Est. Priority Date: 03/13/2000
  • Status: Active Grant
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