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III-V Nitride homoepitaxial material of improved MOVPE epitaxial quality (surface texture and defect density) formed on free-standing (Al,In,Ga)N substrates, and opto-electronic and electronic devices comprising same

  • US 20030213964A1
  • Filed: 12/06/2002
  • Published: 11/20/2003
  • Est. Priority Date: 03/13/2000
  • Status: Active Grant
First Claim
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1. A III-V nitride homoepitaxial layer, deposited on a corresponding III-V nitride material substrate by a VPE process, using Group III source material and nitrogen source material and under deposition conditions including:

  • V/III ratio in a range of from about 1 to about 105, nitrogen source material partial pressure in a range of from about 1 to about 103 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 micron per hour to about 3×

    102 microns per hour.

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