Semiconductor device

• US 20030214043A1
• Filed: 05/15/2003
• Published: 11/20/2003
• Est. Priority Date: 05/17/2002
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Saitoh, Toshio, Saito, Tatsuyuki, Ashihara, Hiroshi, Ishikawa, Kensuke
• Granted Patent: US 6,838,772 B2
• Time in Patent Office: Days
• US Class Current: 257/758
• CPC Class Codes: H01L 21/02068 during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
• CPC Class Codes: H01L 21/02074 the processing being a planarization of conductive layers
• CPC Class Codes: H01L 21/0209 Cleaning of wafer backside
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76828 thermal treatment
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 21/76835 Combinations of two or more different dielectric layers having a low dielectric constant H01L21/76832 takes precedence
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76882 Reflowing or applying of pressure to better fill the contact hole
• CPC Class Codes: H01L 21/76888 By rendering at least a portion of the conductor non conductive, e.g. oxidation
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Provided is a semiconductor device comprising a first insulating film deposited over a semiconductor substrate, an interconnect opening portion formed in the first insulating film, an interconnect disposed in the interconnect opening portion, and a second insulating film formed over the first insulating film and the interconnect, said interconnect having a first conductor film, a second conductor film formed via the first conductor film by chemical vapor deposition or ALS and comprised of any one of titanium silicon nitride, tantalum silicon nitride, tantalum nitride and titanium nitride, a third conductor film formed via the first and second conductor films and comprised of a material having good adhesion with copper; and a fourth conductor film formed via the first, second and third conductor films and having copper as a main component. The present invention makes it possible to improve adhesion between a conductor film composed mainly of copper and another conductor film having a copper-diffusion barrier function, each conductor film constituting the interconnect of a semiconductor device.

Claims

1. A semiconductor device comprising:

(a) a first insulating film deposited over a semiconductor substrate;

(b) an interconnect opening portion formed in the first insulating film;

(c) an interconnect disposed in the interconnect opening portion; and

(d) a second insulating film formed over the first insulating film and the interconnect,

said interconnect having;

a first conductor film formed in the interconnect opening portion;

a second conductor film formed in the interconnect opening portion via the first conductor film by chemical vapor deposition or ALD and comprised of any one of titanium silicon nitride, tantalum silicon nitride, tantalum nitride and titanium nitride;

a third conductor film formed in the interconnect opening portion via the first and second conductor films and comprised of a material having good adhesion with copper; and

a fourth conductor film formed in the interconnect opening portion via the first, second and third conductor films and having copper as a main component.

3. A semiconductor device according to claim 1, wherein the third conductor film has a copper-diffusion barrier property.

4. A semiconductor device according to claim 1, wherein the third conductor film is comprised of any one of tantalum, titanium, tantalum nitride, titanium nitride, laminate film of tantalum and tantalum nitride and laminate film of titanium and titanium nitride.

5. A semiconductor device according to claim 1, wherein the first conductor film is comprised of a material having good adhesion with the first insulating film.

6. A semiconductor device according to claim 1, wherein the third conductor film is comprised of a material having good adhesion with copper.

7. A semiconductor device according to claim 1, wherein the second conductor film has a copper-diffusion barrier property.

8. A semiconductor device according to claim 1, wherein the first conductor film is comprised of any one of tantalum, titanium, tantalum nitride, titanium nitride, laminate film of tantalum and tantalum nitride and laminate film of titanium and titanium nitride.

9. A semiconductor device according to claim 1, wherein the first insulating film has a lower dielectric constant than that of silicon oxide.

13. A semiconductor device according to claim 1, wherein the interconnect is formed to have a damascene structure.

16. A semiconductor device according to claim 13, wherein the thickness of the first conductor film formed over the side surfaces of the main conductor film is greater than that formed on the bottom surface of the main conductor film.

2. A semiconductor device comprising:

(a) a first insulating film deposited over a semiconductor substrate and having a lower dielectric constant than that of silicon oxide;

(b) an interconnect opening portion formed in the first insulating film;

(c) an interconnect disposed in the interconnect opening portion; and

(d) a second insulating film formed over the first insulating film and the interconnect,

said interconnect having;

a first conductor film formed in the interconnect opening portion;

a second conductor film formed in the interconnect opening portion via the first conductor film by chemical vapor deposition or ALD and comprised of any one of titanium silicon nitride, tantalum silicon nitride, tantalum nitride and titanium nitride; and

a fourth conductor film formed in the interconnect opening portion via the first and second conductor films and having copper as a main component.

20. A semiconductor device according to claim 2,

wherein the first conductor film has higher adhesion with the main conductor film than the second conductor film has, and

wherein the second conductor film has a higher copper-diffusion barrier property than the first conductor film has.

21. A semiconductor device according to claim 2, wherein the first conductor film is formed by sputtering.

10. A semiconductor device comprising:

(a) a first insulating film deposited over a semiconductor substrate;

(b) an interconnect opening portion formed in the first insulating film;

(c) an interconnect disposed in the interconnect opening portion; and

(d) a second insulating film formed over the first insulating film and the interconnect,

said interconnect having;

a second conductor film formed in the interconnect opening portion by chemical vapor deposition or ALD and comprised of any one of titanium silicon nitride, tantalum silicon nitride, tantalum nitride and titanium nitride;

a third conductor film formed in the interconnect opening portion via the second conductor films and comprised of a material having good adhesion with copper; and

a fourth conductor film formed in the interconnect opening portion via the second and third conductor films and having copper as a main component.

11. A semiconductor device according to claim 10, wherein the third conductor film has a copper-diffusion barrier property.

12. A semiconductor device according to claim 10, wherein the third conductor film is comprised of any one of tantalum, titanium, tantalum nitride, titanium nitride, laminate film of tantalum and tantalum nitride and laminate film of titanium and titanium nitride.

14. A semiconductor device having a first-level interconnect over a semiconductor substrate,

the first-level interconnect comprising:

a main conductor film composed of copper or composed mainly of copper;

a first conductor film formed over the side surfaces and bottom surface of the main conductor film; and

a second conductor film formed over the side surfaces and bottom surface of the main conductor film via the first conductor film,

wherein the first conductor film has higher adhesion with the main conductor film than the second conductor film has, and

wherein the second conductor film has a higher copper-diffusion barrier property than the first conductor film has.

15. A semiconductor device according to claim 14, wherein the second conductor film is formed by chemical vapor deposition or ALD, while the first conductor film is formed by sputtering.

17. A semiconductor device according to claim 14, further comprising a third conductor film formed over the side surfaces and bottom surface of the main conductor film via the first conductor film and the second conductor film,

wherein the third conductor film has higher adhesion with the main conductor film than the second conductor film has.

18. A semiconductor device according to claim 14, wherein the number of elements constituting the second conductor film is greater than that constituting the first conductor film.

19. A semiconductor device according to claim 14,

wherein the second conductor film is comprised of any one of titanium silicon nitride, tantalum silicon nitride, tantalum nitride and titanium nitride, and

wherein the first conductor film is comprised of any one of tantalum, titanium, tantalum nitride, titanium nitride, laminate film of tantalum and tantalum nitride, and laminate film of titanium and titanium nitride.