Enhanced storage states in an memory
First Claim
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1. A memory, comprising:
- storage cell having a storage structure capable of switching storage states;
programming circuit that writes the storage cell by applying a first voltage to a first node of the storage structure and applying a second voltage to a second node of the storage structure such that the first and second voltages have opposite polarities.
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Abstract
A memory with mechanisms for enhancing storage states without boosting voltages to levels that damage storage cell structures. A storage cell according to the present teachings includes a storage structure capable of switching storage states. A memory according to the present teachings includes means for writing the storage cell by applying a first voltage to a first node of the storage structure and for applying a second voltage to a second node of the storage structure such that the first and second voltages have opposite polarities.
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Citations
17 Claims
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1. A memory, comprising:
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storage cell having a storage structure capable of switching storage states;
programming circuit that writes the storage cell by applying a first voltage to a first node of the storage structure and applying a second voltage to a second node of the storage structure such that the first and second voltages have opposite polarities. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for writing a storage cell in a memory, comprising the steps of:
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applying a first voltage to a first node of a storage structure in the storage cell;
applying a second voltage to a second node of the storage structure such that the first and second voltages have opposite polarities. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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Specification