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Enhanced storage states in an memory

  • US 20030214830A1
  • Filed: 05/17/2002
  • Published: 11/20/2003
  • Est. Priority Date: 05/17/2002
  • Status: Active Grant
First Claim
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1. A memory, comprising:

  • storage cell having a storage structure capable of switching storage states;

    programming circuit that writes the storage cell by applying a first voltage to a first node of the storage structure and applying a second voltage to a second node of the storage structure such that the first and second voltages have opposite polarities.

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