Method and apparatus for VHF plasma processing with load mismatch reliability and stability

• US 20030215373A1
• Filed: 05/20/2002
• Published: 11/20/2003
• Est. Priority Date: 05/20/2002
• Status: Active Grant

• Current Assignee: MKS Instruments Incorporated
• Original Assignee: ENI Technology, Inc.
• Inventors: Reyzelman, Leonid E., Sortor, John E.
• Granted Patent: US 6,703,080 B2
• Time in Patent Office: Days
• US Class Current: 422/186.29
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence

Abstract

A radio frequency (RF) generator apparatus for a plasma processing system that is resistant to nonlinear load mismatch conditions is provided. The apparatus includes an RF oscillator configured to generate an RF signal, an RF amplifier responsive to the RF signal to produce a VHF RF signal having sufficient power to drive a plasma chamber load, and a VHF-band circulatorcoupled to the amplifier and configured to isolate nonlinearities of the plasma chamber load from the amplifier.

Claims

1. A radio frequency (RF) generator apparatus for a plasma processing system that is resistant to nonlinear load mismatch conditions, said apparatus comprising:

an RF oscillator configured to generate an RF signal;

an RF amplifier responsive to said RF signal to produce a VHF RF signal having sufficient power to drive a plasma chamber load; and

a VHF-band circulator coupled to said amplifier and configured to isolate nonlinearities of the plasma chamber load from said RF amplifier.

2. An apparatus in accordance with claim 1 wherein said VHF-band circulator comprises a Y-junction circulator.

3. An apparatus in accordance with claim 1 wherein said RF amplifier comprises a driver, a power amplifier, a first 90 degree hybrid coupler and a second 90 degree hybrid coupler, wherein said first 90 degree hybrid coupler is configured as a two-way splitter isolating said driver from said power amplifier, said power amplifier comprises two half-sections, and said second 90 degree hybrid coupler is configured as a 2-way combiner to combine outputs of both said half-sections of said power amplifier.

4. An apparatus in accordance with claim 1 further comprising a control board configured to adjust a frequency of said RF signal, a directional coupler having an input coupled to an output of said circulator to receive RF power therefrom and a sensor configured to provide, to said control board, a signal representative of an amount of RF power at said output of said circulator, wherein said control board is responsive to said signal representative of an amount of RF power to adjust said frequency of said RF signal.

5. An apparatus in accordance with claim 4 further comprising a low pass filter having an input coupled to an output of said directional coupler.

6. An apparatus in accordance with claim 5 further comprising a high pass filter having an input coupled to an output of said low pass filter and configured to shunt to ground RF harmonics in a signal coupled to the plasma chamber load.

7. An apparatus in accordance with claim 6 further comprising a load matching network having an input coupled to an output of said low pass filter and an output configured to provide power to the plasma chamber load, said load matching network configured to approximately match an output impedance of said apparatus to the plasma chamber load under one set of operating conditions.

8. An apparatus in accordance with claim 1 configured to produce at least 2.5 kilowatts of RF power at a VHF frequency.

9. An apparatus in accordance with claim 8 wherein said amplifier comprises no more than 16 output transistors in push-pull configurations.

10. An apparatus in accordance with claim 1 comprising a first chassis, a power supply housed within said first chassis and a control board configured to control said RF oscillator, and said amplifier, a second chassis separate from said first chassis, and a heat sink housed within said second chassis,

wherein said second chassis also houses said amplifier and said VHF band circulator.

11. An apparatus in accordance with claim 1 wherein said VHF band circulator comprises lumped circuit elements.

12. An apparatus in accordance with claim 1 wherein said VHF band circulator comprises a passive, non-reciprocal ferrite device.

13. An apparatus in accordance with claim 1 wherein said RF oscillator comprises a direct digital synthesizer.

14. An apparatus in accordance with claim 1 wherein said RF oscillator comprises a voltage controlled oscillator operating in a phase locked loop.

15. A plasma processing system comprising:

a plasma chamber; and

a radio frequency (RF) generator apparatus operatively coupled to said plasma chamber to supply RF power thereto at a VHF frequency, said RF generator apparatus comprising an RF amplifier configured to produce said RF power supplied to said RF generator apparatus and a VHF-band circulator having an output configured to supply said RF power to said plasma chamber and to isolate nonlinearities of said plasma chamber from said RF amplifier.

16. A plasma processing system in accordance with claim 15 wherein said VHF band circulator comprises a Y-junction circulator.

17. A plasma processing system in accordance with claim 15 wherein said RF amplifier comprises a driver, a power amplifier, a first 90 degree hybrid coupler and a second 90 degree hybrid coupler, wherein said first 90 degree hybrid coupler is configured as a two-way splitter isolating said driver from said power amplifier, said power amplifier comprises two half-sections, and said second 90 degree hybrid coupler is configured as a 2-way combiner to combine outputs of both said half-sections of said power amplifier.

18. A plasma processing system in accordance with claim 15 further comprising a control board to adjust a frequency of said RF power provided to said plasma chamber, a directional coupler having an input coupled to an output of the circulator to receive RF power therefrom and a sensor configured to provide a signal representative of an amount of RF power at the output of said circulator to the control board, wherein said control board is responsive to said signal representative of an amount of RF power to adjust said frequency of said RF power.

19. A plasma processing system in accordance with claim 18 further comprising a low pass filter operatively coupled between said directional coupler and said plasma chamber to reduce harmonics in RF power passing through said directional coupler.

20. A plasma processing system in accordance with claim 19 further comprising a high pass filter configured to shunt said harmonics to ground.

21. A method for providing RF power at a VHF frequency to a non-linear plasma chamber load comprising:

generating VHF RF power in an RF generator output stage;

passing said VHF RF power through a VHF-band circulator; and

applying the VHF RF power passed through the VHF band circulator to a plasma chamber load.

22. A method in accordance with claim 21 further comprising:

sensing an amount of RF power output from the RF generator output stage utilizing a directional coupler;

adjusting a frequency of the RF power in accordance with the sensed amount of RF power; and

isolating harmonics of the RF power from said directional coupler utilizing a low pass filter operatively coupled between the plasma chamber load and the VHF-band circulator/isolator.

23. A method in accordance with claim 22 further comprising shunting harmonics of said RF power to ground between the plasma chamber load and the directional coupler.

24. A method in accordance with claim 22 further comprising adjusting a frequency of the RF power in accordance with the sensed amount of RF power.