Deposition of silicon nitride
First Claim
1. A method of depositing a silicon nitride film over a substrate surface, comprising:
- separately introducing one or more pulses of a nitrogen precursor and one or more pulses of a silicon precursor to a region adjacent to the substrate surface;
wherein a portion of the pulses of the nitrogen precursor and a portion of the pulses of the silicon precursor are present together at the region adjacent the substrate surface.
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Abstract
Embodiments of the present invention relate to methods and apparatus for depositing a silicon nitride film. More particularly, embodiments of the present invention relate to methods and apparatus for depositing a silicon nitride film by cyclical layer deposition. One method for depositing a silicon nitride film generally comprises separately introducing one or more pulses of a nitrogen precursor and one or more pulses of a silicon precursor to a region adjacent to the substrate surface. A portion of the pulses of the nitrogen precursor and a portion of the pulses of the silicon precursor are present together at the region adjacent the substrate surface. Another embodiment for depositing a silicon nitride film comprises dosing a continuous flow of a purge gas with at least one pulse of a silicon precursor and at least one pulse of a nitrogen precursor. Each pulse of the silicon precursor and the nitrogen precursor is provided for a time period between about 0.01 seconds and about 2.0 seconds. A time period between the pulses of nitrogen precursor and the pulses of silicon precursor is between about 0.01 seconds and about 2.0 seconds. Still another embodiment for depositing a silicon nitride film comprises providing pulses of the silicon precursor and the nitrogen precursor to a substrate at a substrate temperature of about 600° C.
245 Citations
35 Claims
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1. A method of depositing a silicon nitride film over a substrate surface, comprising:
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separately introducing one or more pulses of a nitrogen precursor and one or more pulses of a silicon precursor to a region adjacent to the substrate surface;
wherein a portion of the pulses of the nitrogen precursor and a portion of the pulses of the silicon precursor are present together at the region adjacent the substrate surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of depositing a silicon nitride film over a substrate surface by providing a plurality of cycles of gases, each cycle comprising:
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providing a continuous flow of a purge gas to the chamber;
dosing the continuous flow of the purge gas with at least one pulse of a nitrogen precursor, the pulse of the nitrogen precursor being provided for a time period between about 0.01 seconds and about 2.0 seconds; and
dosing the continuous flow of the purge gas with at least one pulse of a silicon precursor, the pulse of the silicon precursor being provided for a time period between about 0.01 seconds and about 2.0 seconds;
wherein a time period between the pulse of nitrogen precursor and the pulse of silicon precursor is between about 0.01 seconds and about 2.0 seconds. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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26. A method of forming a silicon nitride film by cyclical layer deposition, comprising:
providing pulses of a silicon precursor and providing pulses of a nitrogen precursor to a substrate at a substrate temperature of about 600°
C. or less.- View Dependent Claims (27, 28, 29, 30, 31, 32, 33, 34, 35)
Specification