Method for forming bottle trenches
First Claim
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1. A method for forming bottle trenches, comprising:
- providing a substrate formed with a pad stack layer on the top, a deep trench and a protective layer on the upper portions of sidewalls of the deep trench;
implanting ions into the lower portions of sidewalls and bottom of the trench not covered by the protective layer to amorphize the atomic structure of the sidewalls and bottom;
oxidizing the amorphous sidewalls and bottom of the trench to form a bottle-shaped oxide layer thereon; and
removing the bottle-shaped oxide layer.
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Abstract
A method for forming bottle trenches. The method comprises providing a substrate formed with a pad stack layer on the top, and a deep trench with protective layer on the upper portions of sidewalls thereof, implanting ions into the lower portions of sidewalls and bottom of the trench not covered by the protective layer to amorphize the atomic structure of the sidewalls and bottom, oxidizing the amorphous sidewalls and bottom of the trench to form a bottle-shaped oxide layer thereon, and removing the bottle-shaped oxide layer.
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Citations
15 Claims
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1. A method for forming bottle trenches, comprising:
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providing a substrate formed with a pad stack layer on the top, a deep trench and a protective layer on the upper portions of sidewalls of the deep trench;
implanting ions into the lower portions of sidewalls and bottom of the trench not covered by the protective layer to amorphize the atomic structure of the sidewalls and bottom;
oxidizing the amorphous sidewalls and bottom of the trench to form a bottle-shaped oxide layer thereon; and
removing the bottle-shaped oxide layer. - View Dependent Claims (3, 5, 9)
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2. A method for forming bottle trenches in a semiconductor substrate, comprising:
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providing a substrate formed with a pad stack layer on the top, a deep trench and a protective layer on the upper portions of sidewalls of the deep trench;
implanting ions into the lower portions of sidewalls and bottom of the trench not covered by the protective layer to amorphize the atomic structure of the sidewalls and bottom; and
removing the amorphous sidewalls and bottom of the trench. - View Dependent Claims (4, 6, 7, 8, 10)
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11. A method for forming a bottle trench, comprising:
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providing a semiconductor substrate with an active region;
forming a first pad oxide layer and a first pad nitride layer sequentially on the substrate to form a pad stack layer;
defining the pad stack layer and the substrate to form a trench in the active region;
forming a protective layer on the upper portion of the sidewalls of the trench;
implanting ions into the lower portions of sidewalls and bottom of the trench not covered by the protective layer to amorphize the atomic structure of the sidewalls and bottom; and
removing the amorphous sidewalls and bottom of the trench. - View Dependent Claims (12, 13, 14, 15)
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Specification