Organic field effect transistor

• US 20030218166A1
• Filed: 05/20/2003
• Published: 11/27/2003
• Est. Priority Date: 05/21/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tsutsui, Tetsuo
• Granted Patent: US 8,183,559 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: G11C 11/34 using semiconductor devices
• CPC Class Codes: H10K 10/462 Insulated gate field-effect transistors [IGFETs]
• CPC Class Codes: H10K 10/468 characterised by the gate dielectrics
• CPC Class Codes: H10K 10/481 characterised by the gate conductors
• CPC Class Codes: H10K 10/82 Electrodes
• CPC Class Codes: H10K 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
• CPC Class Codes: H10K 19/10 comprising field-effect transistors
• CPC Class Codes: H10K 19/201 Integrated devices having a three-dimensional layout, e.g. 3D ICs
• CPC Class Codes: H10K 71/30 Doping active layers, e.g. electron transporting layers
• CPC Class Codes: H10K 71/60 Forming conductive regions or layers, e.g. electrodes
• CPC Class Codes: H10K 85/111 comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
• CPC Class Codes: H10K 85/311 Phthalocyanine
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3
• CPC Class Codes: H10K 85/631 Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

Abstract

In an organic field effect transistor, including, on a substrate having an insulating surface, at least a gate electrode, a gate insulating film formed in contact with the gate electrode, an organic semiconductor film formed in contact with the gate insulating film, and at least a pair of source-drain electrodes formed in contact with the organic semiconductor film, a carrier generating electrode to which carriers can be injected in response to a gate signal is implanted within the organic semiconductor film.

Claims

1. An organic field effect transistor, comprising, over a substrate having an insulating surface:

a gate electrode;

a gate insulating film formed in contact with the gate electrode;

an organic semiconductor film formed in contact with the gate insulating film; and

at least a pair of source-drain electrodes formed in contact with the organic semiconductor film,

wherein a carrier generating electrode is implanted within the organic semiconductor film.

6. An organic field effect transistor according to claim 1, wherein the first source electrode and the second source electrode are connected.

9. An organic field effect transistor according to claim 1, wherein the first drain electrode and the second drain electrode are connected.

16. An organic field effect transistor according to claim 1, wherein the carrier generating electrode includes at least two layers of an electron implanted electrode and a hole implanted electrode.

2. An organic field effect transistor, comprising:

a first gate electrode formed in contact with an insulating surface over a substrate;

a first gate insulating film formed in contact with the first gate electrode;

a first source electrode and first drain electrode formed in contact with the first gate insulating film;

an organic semiconductor film formed in contact with the first source electrode, the first drain electrode and the first gate insulating film;

a carrier generating electrode within the organic semiconductor film;

a second source electrode and second drain electrode formed in contact with the organic semiconductor film;

a second gate insulating film formed in contact with the organic semiconductor film; and

a second gate electrode formed in contact with the second gate insulating film.

7. An organic field effect transistor according to claim 2, wherein the first source electrode and the second source electrode are connected.

10. An organic field effect transistor according to claim 2, wherein the first drain electrode and the second drain electrode are connected.

17. An organic field effect transistor according to claim 2, wherein the carrier generating electrode includes at least two layers of an electron implanted electrode and a hole implanted electrode.

3. An organic field effect transistor, comprising:

a first gate electrode formed in contact with an insulating surface over a substrate;

a first gate insulating film formed in contact with the first gate electrode;

a first source electrode and first drain electrode formed in contact with the first gate insulating film;

a first organic semiconductor film formed in contact with the first source electrode, the first drain electrode and the first gate insulating film;

a carrier generating electrode formed in contact with the first organic semiconductor film;

a second organic semiconductor film formed in contact with the carrier generating electrode;

a second source electrode and second drain electrode formed in contact with the second organic semiconductor film;

a second gate insulating film formed in contact with the second organic semiconductor film; and

a second gate electrode formed in contact with the second gate insulating film.

4. An organic field effect transistor according to claim 3, wherein the first organic semiconductor film is hole transportable, and the second organic semiconductor film is electron transportable.

5. An organic field effect transistor according to claim 3, wherein the first organic semiconductor film is electron transportable, and the second organic semiconductor film is hole transportable.

8. An organic field effect transistor according to claim 3, wherein the first source electrode and the second source electrode are connected.

11. An organic field effect transistor according to claim 3, wherein the first drain electrode and the second drain electrode are connected.

18. An organic field effect transistor according to claim 3, wherein the carrier generating electrode includes at least two layers of an electron implanted electrode and a hole implanted electrode.

12. An organic field effect transistor, comprising:

a first gate electrode formed in contact with an insulating surface over a substrate;

a first gate insulating film formed in contact with the first gate electrode;

a first electrode formed in contact with the first gate insulating film;

an organic semiconductor film formed in contact with the first electrode and the first gate insulating film;

a carrier generating electrode implanted within the organic semiconductor film;

a second electrode formed in contact with the organic semiconductor film;

a second gate insulating film formed in contact with the organic semiconductor film; and

a second gate electrode formed in contact with the second gate insulating film.

19. An organic field effect transistor according to claim 12, wherein the carrier generating electrode includes at least two layers of an electron implanted electrode and a hole implanted electrode.

13. An organic field effect transistor, comprising:

a first gate electrode formed in contact with an insulating surface over a substrate;

a first gate insulating film formed in contact with the first gate electrode;

a first electrode formed in contact with the first gate insulating film;

a first organic semiconductor film formed in contact with the first electrode and the first gate insulating film;

a carrier generating electrode formed in contact with the first organic semiconductor film;

a second organic semiconductor film formed in contact with the carrier generating electrode;

a second electrode formed in contact with the second organic semiconductor film;

a second gate insulating film formed in contact with the second organic semiconductor film; and

a second gate electrode formed in contact with the second gate insulating film.

14. An organic field effect transistor according to claim 13, wherein the first organic semiconductor film is hole transportable, and the second organic semiconductor film is electron transportable.

15. An organic field effect transistor according to claim 13, wherein the first organic semiconductor film is electron transportable, and the second organic semiconductor film is hole transportable.

20. An organic field effect transistor according to claim 13, wherein the carrier generating electrode includes at least two layers of an electron implanted electrode and a hole implanted electrode.