Power amplifier capable of switching gain while suppressing noise power in reception band

• US 20030218500A1
• Filed: 11/19/2002
• Published: 11/27/2003
• Est. Priority Date: 05/22/2002
• Status: Abandoned Application

• Current Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Shimura, Teruyuki, Asada, Tomoyuki, Yamamoto, Kazuya, Suzuki, Satoshi
• Application Number:
  US10/298,610
• Publication Number:
  US 20030218500A1
• Time in Patent Office: Days
• US Class Current: 330/51
• CPC Class Codes: H03F 3/193 with field-effect devices H03F3/195 takes precedence

Abstract

An amplification part of a power amplifier includes first to third amplifier stages and a signal transmission part provided in parallel with the first amplifier stage. When a mode select voltage Vmod2 is set to the L level, an input signal is amplified by the first to third amplifier stages. At this time, the signal transmission part does not transmit signals. On the other hand, when mode select voltage Vmod2 is set to the H level, the signal transmission part transmits the input signal to a transistor via a diode. At this time, a control voltage Vmod1800 is set to the L level, and the first amplifier stage is turned off, so that power consumption is reduced. Thus, a power amplifier capable of switching a gain in accordance with GSM/EDGE modes while suppressing noise power in a reception band can be provided.

Claims

1. A power amplifier having first and second modes as operation modes, comprising:

a first amplifying element which amplifies an input signal in said first mode and is set in an inactive state in said second mode;

a second amplifying element for further amplifying an output of said first amplifying element in said first mode and amplifying said input signal in said second mode; and

a transmission circuit performing a first operation of blocking transmission of said input signal to said second amplifying element in said first mode and a second operation of transmitting said input signal to said second amplifying element in said second mode, and switching said first and second operations in accordance with a mode setting signal.

2. The power amplifier according to claim 1, wherein

said transmission circuit includes

a first capacitor connected between a signal input node for receiving said input signal and a first internal node;

a switch circuit connected between said first internal node and a second internal node, which is controlled to be conductive or nonconductive with respect to said input signal in accordance with said mode setting signal; and

a second capacitor connected between said second internal node and an input of said second amplifying element.

3. The power amplifier according to claim 2, wherein

said switch circuit has a diode having an anode connected to said first internal node and a cathode connected to said second internal node, and

an input bias voltage which differs in said first and second modes in accordance with said mode setting signal is applied to the anode of said diode.

4. The power amplifier according to claim 2, wherein

said switch circuit has a transistor connected between said first internal node and said second internal node, having a control electrode receiving said mode setting signal.

5. The power amplifier according to claim 2, wherein

said transmission circuit further includes a resistor connected between said second internal node and a node to which a fixed bias voltage is applied.

6. The power amplifier according to claim 2, further comprising

an inductance connected between said second internal node and a node to which a fixed bias voltage is applied.

7. The power amplifier according to claim 2, wherein

said transmission circuit further includes

a diode having an anode connected to said second internal node;

and

a resistor connected between a cathode of said diode and a node to which a fixed bias voltage is applied.

8. The power amplifier according to claim 2, wherein

said transmission circuit further includes

a diode having an anode connected to said second internal node;

and the power amplifier further comprising

an inductance connected between a cathode of said diode and a node to which a fixed bias voltage is applied.

9. The power amplifier according to claim 1, further comprising

a matching circuit connected between an output of said first amplifying element and an input of said second amplifying element, in which a first impedance seen in the direction from the output of said first amplifying element to the input of said second amplifying element is set to a value so that an output signal of said first amplifying element can be transmitted to the input of said second amplifying element in said first mode, and a second impedance seen in the direction from the input of said second amplifying element to the output of said first amplifying element is set to a value so that transmission of said input signal from the input of said second amplifying element to the output of said first amplifying element can be blocked in said second mode.

10. The power amplifier according to claim 9, wherein

said matching circuit includes

a capacitor forming a parallel resonance circuit with respect to an inductive reactance and a capacitive reactance which are parasitic on the output of said first amplifying element in said second mode;

and

a switch circuit for connecting said capacitor between the output of said first amplifying element and a fixed potential in said second mode, and setting at least one of electrodes of said capacitor to an open state in said first mode.

11. The power amplifier according to claim 10, wherein

one end of said capacitor is connected to the output of said first amplifying element, and

said switch circuit includes a transistor connected between the other end of said capacitor and a node to which said fixed potential is applied, which is switched between a conductive state and a nonconductive state in accordance with said mode setting signal.

12. The power amplifier according to claim 10, wherein

one end of said capacitor is connected to a node to which a fixed potential is applied, and

said switch circuit has a transistor connected between the other end of said capacitor and the output of said first amplifying element, which is switched between a conductive state and a nonconductive state in accordance with said mode setting signal.

13. The power amplifier according to claim 1, wherein

each of said first and second amplifying elements is a hetero-junction bipolar transistor.