Projection print engine and method for forming same
First Claim
Patent Images
1. A projection print engine comprising:
- a microelectronic chip comprising a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, an accommodating buffer material overlying the amorphous oxide material, and an array of light emitting devices formed overlying the accommodating buffer layer material, and a photoconductive drum configured to receive light emitted from the microelectronic chip.
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Abstract
Semiconductor print engine structures (304) are formed by growing high quality epitaxial layers (26) of monocrystalline materials overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. The compliant substrate includes an accommodating buffer layer (24) including a layer of monocrystalline oxide spaced apart from a silicon wafer (22) by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24).
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Citations
50 Claims
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1. A projection print engine comprising:
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a microelectronic chip comprising a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, an accommodating buffer material overlying the amorphous oxide material, and an array of light emitting devices formed overlying the accommodating buffer layer material, and a photoconductive drum configured to receive light emitted from the microelectronic chip. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A semiconductor structure for a projection print engine, the structure comprising:
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a silicon substrate;
an accommodating buffer layer formed overlying the silicon substrate;
an amorphous interface layer formed between the silicon substrate and the accommodating buffer layer; and
a light emitting structure formed overlying the accommodating buffer layer, the light emitting structure comprising a first wide bandgap material layer, an active region, and a second wide bandgap material layer. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40)
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41. A process for fabricating a semiconductor structure for a projection print engine, the process comprising:
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providing a monocrystalline silicon substrate;
depositing a monocrystalline accommodating buffer film overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness of the material that would result in strain-induced defects;
forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline accommodating buffer film and the monocrystalline silicon substrate;
epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline accommodating buffer film; and
forming a light emitting device using the monocrystalline compound semiconductor layer. - View Dependent Claims (42, 43, 44, 45, 46, 47, 48)
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49. A projection print engine comprising:
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a monocrystalline silicon substrate having MOS devices formed therein, the MOS devices configured to multiplex and demultiplex electronic information;
an amorphous oxide material overlying the monocrystalline silicon substrate;
an accommodating buffer material overlying the amorphous oxide material;
an array of light emitting devices formed overlying the accommodating buffer layer material;
a photoconductive drum; and
a lens interposed between the photoconductive drum and the silicon substrate. - View Dependent Claims (50)
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Specification