Apparatus and method for depositing optical thin film

• US 20030218754A1
• Filed: 05/19/2003
• Published: 11/27/2003
• Est. Priority Date: 05/24/2002
• Status: Abandoned Application

• Current Assignee: ALPS Electric Company Limited (Alps Alpine Co., Ltd.)
• Original Assignee: ALPS Electric Company Limited (Alps Alpine Co., Ltd.)
• Inventors: Umeda, Yuichi
• Application Number:
  US10/441,509
• Publication Number:
  US 20030218754A1
• Time in Patent Office: Days
• US Class Current: 356/485
• CPC Class Codes: C23C 14/545 using measurement on deposited material
• CPC Class Codes: G01B 11/0683 measurement during deposition or removal of the layer

Abstract

A film deposition apparatus includes an optical monitor for measuring the light intensities of a plurality of measuring light beams having different wavelengths that are transmitted or reflected by a film during deposition, a phase estimating section for calculating the phase of a point corresponding to a desired film thickness for each of the measuring wavelengths based on the relationship between the expected periodic change in the light intensity of the corresponding measuring light beam until the desired thickness is reached, and the phase corresponding to the periodic change, and calculating the degree of phase advance by comparing the periodic change and the change in the intensity monitored by the optical monitor, and a deposition control unit for comprehensively determining a deposition end point based on all the degrees of phase advance and for completing the film deposition at the deposition end point.

Claims

1. A film deposition apparatus comprising:

an optical measurement unit for measuring the light intensities of a plurality of measuring light beams having different wavelengths that are transmitted or reflected by a film during deposition;

a phase estimating unit for calculating the phase of a point corresponding to a desired film thickness for each of the measuring wavelengths based on the relationship between the expected periodic change in the light intensity of the corresponding measuring light beam until the desired film thickness is reached, and the phase corresponding to the expected periodic change, and calculating the degree of phase advance by comparing the expected periodic change and the change in the light intensity of the measuring light beam monitored by the optical measurement unit, the degree of phase advance representing the ratio of the phase of a point corresponding to the thickness of the film during deposition to the phase of the point corresponding to the desired film thickness; and

a deposition control unit for comprehensively determining a deposition end point based on the degrees of phase advance for all the wavelengths and for completing the film deposition at the deposition end point.

2. A film deposition apparatus according to claim 1, wherein, when the film has a plurality of layers, the phase estimating unit calculates the degree of phase advance by comparing the periodic change expected from the layout of the plurality of layers and the change in the light intensity monitored by the optical measurement unit.

3. A film deposition apparatus according to claim 1, wherein the phase estimating unit calculates the reciprocal of the light intensity of each of the measuring light beams, and calculates the degree of phase advance by comparing the periodic change regressed by a cosine function or a sine function and the change in the light intensity of the measuring light beam monitored by the optical measurement unit.

4. A film deposition apparatus according to claim 1, wherein the optical measurement unit includes a combination of a wavelength-tunable light source and a light-intensity detecting unit, and sequentially detects the phases of the different measuring light beams in time series.

5. A film deposition apparatus according to claim 1, wherein the optical measurement unit includes a combination of a wavelength-tunable light source and a light-intensity detecting unit, periodically sweeps the measuring wavelengths of the measuring light beams, measures changes in the light intensity of each of the measuring light beams, and determines the light intensity of the measuring light beam by parallel data processing.

6. A film deposition apparatus according to claim 1, wherein the optical measurement unit includes a plurality of light sources for emitting measuring light beams having different wavelengths and a light-intensity detecting unit in combination, and the light sources are arranged so that the optical axes thereof are at a small angle to a vertical axis of a surface to be measured and so that the measuring light beams pass through the same point on the surface to be measured.

7. A film deposition apparatus according to claim 1, wherein the optical measurement unit includes a light source for emitting measuring light having broadband wavelength, and a spectroscopic unit, and the light intensities of light components of the measuring light separated by the spectroscopic unit are measured in parallel.

8. A film deposition method comprising:

an optical measurement step of measuring the light intensities of a plurality of measuring light beams having different wavelengths that are transmitted or reflected by a film during deposition;

a phase estimating step of calculating the phase of a point corresponding to a desired film thickness for each of the measuring wavelengths based on the relationship between expected periodic change in the light intensity of the corresponding measuring light beam until the desired film thickness is reached, and the phase corresponding to the periodic change, and calculating the degree of phase advance by comparing the periodic change and the changes in the light intensity of the measuring light beams monitored in the optical measurement step, the degree of phase advance representing the ratio of the phase of a point corresponding to the thickness of the film during deposition to the phase of the point corresponding to the desired film thickness; and

a deposition control step of comprehensively determining a deposition end point based on the degrees of phase advance for all the wavelengths and of completing the film deposition at the deposition end point.

9. A film deposition method according to claim 8, wherein phase differences between the phases of the points corresponding to the desired film thickness for the measuring wavelengths and the phases of the points corresponding to the thickness of the film being deposited are calculated, and the deposition end point is calculated as a point at which the square sum of the phase differences of all the measuring wavelengths shows the minimum value.

10. A film deposition method according to claim 9, wherein, when the film has a plurality of layers, the degree of phase advance is calculated in the phase estimating step by comparing the periodic change expected from the layout of the layers and the change in the light intensity monitored in the optical measurement step.

11. An optical filter made of a multilayer thin film deposited by a film deposition apparatus, wherein the optical-thin-film deposition apparatus comprises:

an optical measurement unit for measuring the light intensities of a plurality of measuring light beams having different wavelengths that are transmitted or reflected by a film during deposition;

a phase estimating unit for calculating the phase of a point corresponding to a desired film thickness for each of the measuring wavelengths based on the relationship between the expected periodic change in the light intensity of the corresponding measuring light beam until the desired film thickness is reached, and the phase corresponding to the periodic change, and calculating the degree of phase advance by comparing the periodic change and the change in the light intensity of the measuring light beam monitored by the optical measurement unit, the degrees of phase advance representing the ratio of the phase of a point corresponding to the thickness of the film during deposition to the phase of the point corresponding to the desired film thickness; and

a deposition control unit for comprehensively determining a deposition end point based on the degrees of phase advance for all the wavelengths and for completing the film deposition at the deposition end point.

12. An optical filter made of a multilayer thin film deposited by a film deposition method, wherein the optical-thin-film deposition method comprises:

an optical measurement step of measuring the light intensities of a plurality of measuring light beams having different wavelengths that are transmitted or reflected by a film during deposition;

a phase estimating step of calculating the phase of a point corresponding to a desired film thickness for each of the measuring wavelengths based on the relationship between the expected periodic change in the light intensity of the corresponding measuring light beam until the desired film thickness is reached, and the phase corresponding to the periodic change, and calculating the degree of phase advance by comparing the periodic change and the change in the light intensity of the measuring light beam monitored in the optical measurement step, the degree of phase advance representing the ratio of the phase of a point corresponding to the thickness of the film during deposition to the phase of the point corresponding to the desired film thickness; and

a deposition control step of comprehensively determining a deposition end point based on the degrees of phase advance for all the wavelengths and of completing the film deposition at the deposition end point.

13. A film deposition apparatus for controlling the deposition of a thin film on a substrate, the apparatus comprising:

an optical measurement unit configured to measure the intensities of at least two measuring light beams reflected from or transmitted through a film deposited on the substrate, each of the at least two light beams having different wavelengths and an intensity that varies as a periodic function of the thickness of the film;

a phase estimating section configured to determine, for each of the measuring light beams, a target phase corresponding to the desired thickness of the film and a measured phase corresponding to the thickness of the deposited film based on the intensities measured; and

a deposition control unit configured to control the deposition so that deposition is terminated in response to a signal based on a comparison between the measured phase and target phase for each of the measuring light beams.

14. The film deposition apparatus as recited in claim 13, wherein the comparison between the measured phase and target phase includes finding a phase difference between the measured and target phases for each wavelength of the at least two measuring light beams.

15. The film deposition apparatus as recited in claim 14, wherein the comparison further includes summing, for each of a plurality of sampling times, the square of the phase difference for each wavelength of the at least two measuring light beams.

16. The film deposition apparatus as recited in claim 13, wherein the optical measurement unit includes a combination of a wavelength-tunable light source and a light-intensity detecting unit, and sequentially detects the phases of the different measuring light beams.

17. The film deposition apparatus as recited in claim 13, wherein the optical measurement unit includes at least two light sources and a light-intensity detecting unit configured to detect in parallel the phases of the different measuring light beams.