RAM memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers
First Claim
1. A 3-Dimensional Random Access Memory (RAM) system for data storage and retrieval, comprising:
- A large number of memory cells, each located at the crossing of at least two wires;
Control circuits for accessing said cells;
External connectors for interface with other devices.
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Abstract
As the Internet becomes faster and faster, with more and more demanding applications, and after the problems of faster routing and faster optic fibers are solved, the next main bottleneck will be the speed of the servers, and more specifically the speed (or rather the lack of it) of the hard-disks. Therefore, finding new revolutionary ways of making faster and larger hard-disks and/or larger RAM in the computer itself can help boost the computer and Internet world much faster into the future. The present invention tries to solve the problem of making much faster and much larger preferably non-volatile RAM by Using preferably 3-dimensional addressable preferably nano memory matrices instead of 2-dimensional, so that for example if instead of a 10×10 cm flat surface we have for example a 6×6×1 cm or 3×3×2 cm cube, we can get millions of Terabits, which are millions of times larger than current hard disks. So this can be used for example as computer RAM memory, as a hard-disk, or as a removable cartridge that conveniently fits in the pocket. Many variations are discussed, including memory cells that have more than two states each, and intermediate hybrid systems wherein larger preferably lithographically produced cells are each coupled to one or more nano-chips within them.
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Citations
23 Claims
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1. A 3-Dimensional Random Access Memory (RAM) system for data storage and retrieval, comprising:
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A large number of memory cells, each located at the crossing of at least two wires;
Control circuits for accessing said cells;
External connectors for interface with other devices. - View Dependent Claims (2, 3, 4, 5)
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- 6. A Random Access Memory (RAM) system for data storage and retrieval based on at least some nano-scale elements, wherein the cells and wires are created by lithography but each cell contains at least a number of nano-scale elements that enable the cell to reliably contain more than 2 values, so that more data can be kept in the same physical space.
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9. A 3-Dimensional Random Access Memory (RAM) method for data storage and retrieval, based on the steps of:
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Using a large number of memory cells, each located at the crossing of at least two wires;
Using control circuits for accessing said cells;
Using external connectors for interface with other devices. - View Dependent Claims (10, 11, 12, 13)
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- 14. A Random Access Memory (RAM) method for data storage and retrieval based on at least some nano-scale elements, wherein the cells and wires are created by lithography but each cell contains at least a number of nano-scale elements that enable the cell to reliably contain more than 2 values, so that more data can be kept in the same physical space.
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21. A method for interfacing with a 3-Dimensional chip wherein external connectors are comprised of flat shapes on at least one surface of said 3-dimensional chip is kept in place by at least one of:
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a. A moving element that can close on it when it is in the matching socket. b. Small protrusions and/or sockets in various places c. At least some of said shapes are at least a little sunk into the surface or at least a little protruding, in one or more of the planes, to make sure the cube sits in place. - View Dependent Claims (22)
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23. A 3-d magnetic nano-RAM wherein at least 3 planes of elongated laser beams are used to access the cells.
Specification