Clamshell and small volume chamber with fixed substrate support

• US 20030221780A1
• Filed: 11/21/2002
• Published: 12/04/2003
• Est. Priority Date: 01/26/2002
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Tzu, Gwo-Chuan, Xi, Ming, Mak, Alfred W., Lei, Lawrence C., Tepman, Avi, Glenn, Walter Benjamin
• Granted Patent: US 6,866,746 B2
• Time in Patent Office: Days
• US Class Current: 156/345.29
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45521 the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers

Abstract

Embodiments of the present invention generally relate to a clamshell and small volume chamber with a fixed substrate support. One embodiment of a processing chamber includes a fixed substrate support having a substrate receiving surface, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the fixed substrate support. The pumping ring forms at least a portion of a pumping channel and has one or more apertures formed therethrough. The chamber may further include a gas-flow diffuser disposed radially inward of the apertures of the pumping ring. Another embodiment of a processing chamber includes a first assembly comprising a fixed substrate support and a second assembly comprising a gas distribution assembly. The first assembly includes a first assembly body that is shaped and sized so that at least a portion of the first assembly body is below the substrate receiving surface of the substrate support. A hinge assembly couples the first assembly and the second assembly. The first assembly and the second assembly can be selectively positioned between an open position and a closed position.

Claims

1. A processing chamber, comprising:

a fixed substrate support having a substrate receiving surface;

a pumping ring disposed around a perimeter of the substrate receiving surface, the pumping ring forming at least a portion of a pumping channel and having one or more apertures formed therethrough; and

a gas distribution assembly disposed over the fixed substrate support.

2. The process chamber of claim 1, wherein the one or more apertures provide fluid communication between the pumping channel and a processing zone between the fixed substrate support and the gas distribution assembly.

3. The process chamber of claim 1, wherein the pumping ring is shaped and sized so that the one or more apertures are positioned below a plane defined by the substrate receiving surface.

4. The processing chamber of claim 1, wherein the apertures are distributed evenly around the pumping ring.

5. The processing chamber of claim 1, wherein the position of the apertures varies around the pumping ring.

6. The processing chamber of claim 1, wherein the apertures have uniform size.

7. The processing chamber of claim 1, wherein the apertures having varying size.

8. The processing chamber of claim 1, further comprising a gas-flow diffuser disposed between the apertures of the pumping ring and the substrate receiving surface.

9. The processing chamber of claim 8, wherein the gas-flow diffuser is disposed on the pumping ring.

10. The processing chamber of claim 8, wherein the gas-flow diffuser extends partially around the perimeter of the substrate receiving surface.

11. The processing chamber of claim 8, wherein the gas-flow diffuser extends entirely around the perimeter of the substrate receiving surface.

12. The processing chamber of claim 8, wherein the gas-flow diffuser has different heights.

13. The processing chamber of claim 8, wherein the gas-flow diffuser is tapered.

14. The processing chamber of claim 8, wherein the gas-flow diffuser has a uniform height.

15. The processing chamber of claim 1, further comprising a gap between the substrate support and the pumping channel.

16. The processing chamber of claim 15, further comprising a gas port below the substrate support, the gas port adapted to provided a bottom purge gas through the gap between the substrate support and the pumping channel.

17. The processing chamber of claim 1, wherein the spacing between the substrate support and the gas distribution assembly is about 0.75 inches or less.

18. The processing chamber of claim 1, further comprising a resistive heating element disposed in the substrate support.

19. A processing chamber, comprising:

a first assembly comprising a first assembly body and a fixed substrate support having a substrate receiving surface;

a second assembly comprising a gas distribution assembly;

a hinge assembly coupling the first assembly and the second assembly, wherein the first assembly and the second assembly can be selectively positioned between an open position and a closed position; and

the first assembly body shaped and sized so that at least a portion of the first assembly body is below the substrate receiving surface of the substrate support.

20. The processing chamber of claim 19, wherein an upper surface of the first assembly body is angled.

21. The processing chamber of claim 19, wherein the portion of the first assembly body below the substrate receiving surface provides access below the substrate support.

22. The processing chamber of claim 19, wherein a portion of the first assembly body is above the substrate receiving surface.

23. The processing chamber of claim 19, wherein a portion of the first assembly body is above the substrate receiving surface and forms a first partial sidewall.

24. The processing chamber of claim 23, wherein the second assembly comprises a second assembly body, a portion of the second assembly body forming a second partial sidewall.

25. The processing chamber of claim 24, wherein a processing zone is defined between the fixed substrate support, the gas distribution assembly, the first partial sidewall, and the second partial sidewall.

26. The processing chamber of claim 23, further comprising a slit valve formed in the first partial sidewall of the first assembly body.

27. The processing chamber of claim 19, further comprising a resistive heating element disposed in the substrate support.