Gallium-nitride-based compound semiconductor device
First Claim
1. A gallium-nitride-based compound semiconductor device, comprising:
- a substrate;
a GaN-based buffer layer formed on said substrate; and
a GaN-based compound semiconductor layer formed on said GaN-based buffer layer, wherein said GaN-based buffer layer comprises AlxGa1-xN1-yPy (0≦
x≦
1, 0<
y<
1).
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Abstract
A GaN-based compound semiconductor device formed by sequentially forming, on a substrate, a GaN-based buffer layer and a GaN-based compound semiconductor layer. AlxGa1-xN1-yPy or AlxGa1-xN1-yAsy (0≦x≦1, 0<y<1) is used as the GaN-based buffer layer. N in AlxGa1-xN is partially substituted by P or As, whereby a buffer layer is grown at a high temperature. Thus, a difference in processing temperature between the process for growing a buffer layer and processes before and after the process is reduced. The GaN-based compound semiconductor layer formed on the buffer layer comprises a GaN-based layer, an n-type clad layer, a light-emitting layer, and a p-type clad layer. A multiple quantum well (MQW) layer formed from GaNP or GaNAs and GaN is inserted between the GaN-based layers, thereby reducing a dislocation density of the GaN-based layers.
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Citations
30 Claims
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1. A gallium-nitride-based compound semiconductor device, comprising:
-
a substrate;
a GaN-based buffer layer formed on said substrate; and
a GaN-based compound semiconductor layer formed on said GaN-based buffer layer, wherein said GaN-based buffer layer comprises AlxGa1-xN1-yPy (0≦
x≦
1, 0<
y<
1). - View Dependent Claims (2, 3, 4, 5, 6)
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7. A gallium-nitride-based compound semiconductor device, comprising:
-
a substrate;
a GaN-based buffer layer formed on said substrate; and
a GaN-based compound semiconductor layer formed on said GaN-based buffer layer, wherein said GaN-based buffer layer comprises AlxGa1-xN1-yAsy (0≦
x≦
1, 0<
y<
1). - View Dependent Claims (8, 9, 10, 11, 12)
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13. A gallium-nitride-based compound semiconductor device, comprising:
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a substrate;
a GaN-based buffer layer formed on said substrate;
a first GaN-based layer formed on said GaN-based buffer layer;
a multiple quantum well (MQW) layer formed on said first GaN-based layer by alternately stacking GaN1-yPy(0<
y<
1) and GaN; and
a second GaN-based layer formed on said MQW layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21)
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22. A gallium-nitride-based compound semiconductor device, comprising:
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a substrate;
a GaN-based buffer layer formed on said substrate;
a first GaN-based layer formed on said GaN-based buffer layer;
a multiple quantum well (MQW) layer formed on said first GaN-based layer by alternately stacking GaN1-yAsy (0<
y<
1) and GaN; and
a second GaN-based layer formed on said MQW layer. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30)
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Specification