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Gallium-nitride-based compound semiconductor device

  • US 20030222266A1
  • Filed: 02/28/2003
  • Published: 12/04/2003
  • Est. Priority Date: 02/28/2002
  • Status: Active Grant
First Claim
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1. A gallium-nitride-based compound semiconductor device, comprising:

  • a substrate;

    a GaN-based buffer layer formed on said substrate; and

    a GaN-based compound semiconductor layer formed on said GaN-based buffer layer, wherein said GaN-based buffer layer comprises AlxGa1-xN1-yPy (0≦

    x≦

    1, 0<

    y<

    1).

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